CAJ | 학술논문

用射频分子束外延技术研制出了室温迁移率为1035cm2/(V·s),二维电子气浓度为1.0×1013cm-2,77K迁移率为2653cm2/(V·s),二维电子气浓度为9.6×1012cm-2的AlGaN/GaN高电子迁移率晶体管材料.用此材料研制的器件(栅长为1μm,栅宽为80μm,源-漏间距为4μm)的室温非本征跨导为186mS/mm,最大漏极饱和电流密度为925mA/mm,特征频率为18.8GHz.
용사빈분자속외연기술연제출료실온천이솔위1035cm2/(V·s),이유전자기농도위1.0×1013cm-2,77K천이솔위2653cm2/(V·s),이유전자기농도위9.6×1012cm-2적AlGaN/GaN고전자천이솔정체관재료.용차재료연제적기건(책장위1μm,책관위80μm,원-루간거위4μm)적실온비본정과도위186mS/mm,최대루겁포화전류밀도위925mA/mm,특정빈솔위18.8GHz.
AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×1013cm-2 at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The ft,unit-current-gain frequency of the devices,is about 18.8GHz.