CAJ | 학술논문

用辉光放电质谱(GDMS)测量了原生液封直拉(LEC)磷化铟(InP)的杂质含量.利用霍尔效应测到的非掺LEC-InP的自由电子浓度明显高于净施主杂质的浓度.在非掺和掺铁InP中都可以用红外吸收谱测到浓度很高的一个氢-铟空位复合体施主缺陷.这个施主的浓度随着电离的铁受主Fe2+浓度的增加而增加.这些结果表明半绝缘体中氢-铟空位复合体施主缺陷的存在对铁掺杂浓度和电学补偿都有重要影响.
용휘광방전질보(GDMS)측량료원생액봉직랍(LEC)린화인(InP)적잡질함량.이용곽이효응측도적비참LEC-InP적자유전자농도명현고우정시주잡질적농도.재비참화참철InP중도가이용홍외흡수보측도농도흔고적일개경-인공위복합체시주결함.저개시주적농도수착전리적철수주Fe2+농도적증가이증가.저사결과표명반절연체중경-인공위복합체시주결함적존재대철참잡농도화전학보상도유중요영향.
The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy.Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be obseved with infrared absorption spectra.The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe2+ concentration in Fe-doped semi-insulating (SI) InP.These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP,and that it has significant influence on the compensation in Fe-doped SI InP.