半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2004年
12期
1561-1566
,共6页
4H-SiC%埋沟%MOSFET%场效应迁移率
4H-SiC%埋溝%MOSFET%場效應遷移率
4H-SiC%매구%MOSFET%장효응천이솔
4H-SiC%buried-channel%MOSFET%field-effect mobility
研制了4H-SiC热氧化生长氧化层埋沟nMOSFET.用室温下N离子注入的方法形成埋沟区和源漏区,然后在1600℃进行激活退火.离子注入所得到的埋沟区深度大约为0.2μm.从转移特性提取出来的峰值场效应迁移率约为18.1cm2/(V·s).造成低场效应迁移率的主要因素可能是粗糙的器件表面(器件表面布满密密麻麻的小坑).3μm和5μm器件的阈值电压分别为1.73V和1.72V.3μm器件饱和跨导约为102μS( V G=20V, V D=10V).
研製瞭4H-SiC熱氧化生長氧化層埋溝nMOSFET.用室溫下N離子註入的方法形成埋溝區和源漏區,然後在1600℃進行激活退火.離子註入所得到的埋溝區深度大約為0.2μm.從轉移特性提取齣來的峰值場效應遷移率約為18.1cm2/(V·s).造成低場效應遷移率的主要因素可能是粗糙的器件錶麵(器件錶麵佈滿密密痳痳的小坑).3μm和5μm器件的閾值電壓分彆為1.73V和1.72V.3μm器件飽和跨導約為102μS( V G=20V, V D=10V).
연제료4H-SiC열양화생장양화층매구nMOSFET.용실온하N리자주입적방법형성매구구화원루구,연후재1600℃진행격활퇴화.리자주입소득도적매구구심도대약위0.2μm.종전이특성제취출래적봉치장효응천이솔약위18.1cm2/(V·s).조성저장효응천이솔적주요인소가능시조조적기건표면(기건표면포만밀밀마마적소갱).3μm화5μm기건적역치전압분별위1.73V화1.72V.3μm기건포화과도약위102μS( V G=20V, V D=10V).
The buried channel (BC) nMOSFETs with gate oxide grown thermally on 4H-SiC are fabricated.The BC region and source/drain region are formed by nitrogen implantation at room temperature followed by annealing at 1600℃.The channel depth is about 0.2μm.The peak field-effect mobility of 18.1cm2/(V·s) for 5μm device is achieved.Thickly dotted pits found in the surface through microscope may be one of the important factors of the cause low field-effect mobility.The threshold voltages are 1.73V and 1.72V for the gate lengths of 3μm and 5μm respectively.The transconductance at V G=20V and V D=10V is 102μS for the gate length of 3μm.
