CAJ | 학술논문

在本文中我们首次报道了p型掺杂的自组织Si/Ge量子点中空穴能级子带间的电子拉曼散射,此电子跃迁的能量为105meV.Si/Ge量子点Ge-Ge模的共振拉曼散射表明此空穴能级间的电子拉曼散射与Γ点附近的E0(≈2.52eV)发生了共振,而E1的能量小于2.3eV.变温实验和偏振实验进一步证实了我们的指认.所有观测的实验数据与6-band k@p能带结构理论的计算结果吻合得很好.
재본문중아문수차보도료p형참잡적자조직Si/Ge양자점중공혈능급자대간적전자랍만산사,차전자약천적능량위105meV.Si/Ge양자점Ge-Ge모적공진랍만산사표명차공혈능급간적전자랍만산사여Γ점부근적E0(≈2.52eV)발생료공진,이E1적능량소우2.3eV.변온실험화편진실험진일보증실료아문적지인.소유관측적실험수거여6-band k@p능대결구이론적계산결과문합득흔호.
The first resonant electronic Raman spectroscopy study of discrete electronic transitions within self-assembled Si/Ge quantum dots (QD) is reported in this paper. A Raman transition of localized holes with a dispersionless energy of 105 meV and a resonance energy to virtually localized electrons at the direct band gap E0≈2.52 eV far above the indirect fundamental band gap of Si/Ge are observed. Both values are in agreement with 6-band k@p band structure calculations for such QDs.