人工晶体学报
人工晶體學報
인공정체학보
2009年
5期
1142-1145,1159
,共5页
代秀红%张荣香%李晓苇%董国义%杨少鹏%韩理
代秀紅%張榮香%李曉葦%董國義%楊少鵬%韓理
대수홍%장영향%리효위%동국의%양소붕%한리
微波吸收介电谱%掺杂浓度%光电子衰减%浅电子陷阱
微波吸收介電譜%摻雜濃度%光電子衰減%淺電子陷阱
미파흡수개전보%참잡농도%광전자쇠감%천전자함정
microwave absorption and dielectric spectrum%doping concentration%photoelectrons decay%shallow electron traps
利用微波吸收介电谱检测技术,检测均匀掺杂[Fe(CN)_6]~(4-)盐的立方体AgCl微晶首次曝光后的自由和浅束缚光电子的衰减时间分辨谱.实验发现,随着掺杂浓度的增加,样品中自由光电子衰减时间逐渐从未掺杂时的116 ns延长至1133 ns.分析光电子衰减曲线还同时得到,随着掺杂浓度的增加,光电子的前期较慢衰减过程逐渐变快,后期较快衰减过程逐渐变慢,总体上衰减时间逐渐增加,且掺杂浓度变化对后期衰减影响较大.研究表明掺杂使得晶体中引入了能总体上延缓光电子衰减的浅电子陷阱,并且随掺杂浓度的增加,浅电子陷阱特征更加明显.
利用微波吸收介電譜檢測技術,檢測均勻摻雜[Fe(CN)_6]~(4-)鹽的立方體AgCl微晶首次曝光後的自由和淺束縳光電子的衰減時間分辨譜.實驗髮現,隨著摻雜濃度的增加,樣品中自由光電子衰減時間逐漸從未摻雜時的116 ns延長至1133 ns.分析光電子衰減麯線還同時得到,隨著摻雜濃度的增加,光電子的前期較慢衰減過程逐漸變快,後期較快衰減過程逐漸變慢,總體上衰減時間逐漸增加,且摻雜濃度變化對後期衰減影響較大.研究錶明摻雜使得晶體中引入瞭能總體上延緩光電子衰減的淺電子陷阱,併且隨摻雜濃度的增加,淺電子陷阱特徵更加明顯.
이용미파흡수개전보검측기술,검측균균참잡[Fe(CN)_6]~(4-)염적립방체AgCl미정수차폭광후적자유화천속박광전자적쇠감시간분변보.실험발현,수착참잡농도적증가,양품중자유광전자쇠감시간축점종미참잡시적116 ns연장지1133 ns.분석광전자쇠감곡선환동시득도,수착참잡농도적증가,광전자적전기교만쇠감과정축점변쾌,후기교쾌쇠감과정축점변만,총체상쇠감시간축점증가,차참잡농도변화대후기쇠감영향교대.연구표명참잡사득정체중인입료능총체상연완광전자쇠감적천전자함정,병차수참잡농도적증가,천전자함정특정경가명현.
The decay spectra of the free and shallow-trapped photoelectrons at the first exposure time in cubic AgCl microcrystals doped with [Fe(CN)_6]~(4-) were obtained by microwave absorption and dielectric spetrum mesurement technique. It is found that the free photoelectrons decay time increased from 116ns to 1133 ns as the doping concentration increasing. By analyzing the photoelectrons decay curve, it is also found that the doping concentration increasing, the first slower decay section becomes faster and the second faster decay section slower, as a whole the decay time increased. The variation of the doping concentration has greater impact on the photoelectrons later decay part. The result shows that the doping introduces shallow electron traps which can delay the decay process of the photoelectrons, and with the doping concentration increasing, the characteristic of shallow electron traps becomes remarkable.