功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2010年
2期
282-284
,共3页
周昊%介万奇%查钢强%高俊宁
週昊%介萬奇%查鋼彊%高俊寧
주호%개만기%사강강%고준저
CdZnTe薄膜%纳米%结构%形貌
CdZnTe薄膜%納米%結構%形貌
CdZnTe박막%납미%결구%형모
CdZnTe films%nanometer%structure%surface morphology
采用真空蒸发沉积技术在ITO玻璃上制备得到CdZnTe纳米晶薄膜,并利用台阶仪、X射线能谱仪(EDS)、X射线衍射仪(XRD)和原子力显微镜(AFM)研究了CdZnTe薄膜厚度、成分、结构和形貌特征.实验结果表明,薄膜在(111)面表现出明显的择优生长特性.在薄膜生长初期,纳米薄膜中存在一定程度的非晶态富集Te,但随着沉积时间延长,薄膜成分向化学计量比逼近,结构也向闪锌矿CdZnTe转变.薄膜表面形貌平整,粗糙度R_a约为2~5nm.随着沉积时间的延长,薄膜形貌由晶粒堆砌状向多晶层片连接状转变.在沉积时间分别为15、30和45min时,薄膜的厚度依次分别约为100、300和500nm,而薄膜的晶粒平均尺寸依次分别为43.15、30.81和71.94nm.
採用真空蒸髮沉積技術在ITO玻璃上製備得到CdZnTe納米晶薄膜,併利用檯階儀、X射線能譜儀(EDS)、X射線衍射儀(XRD)和原子力顯微鏡(AFM)研究瞭CdZnTe薄膜厚度、成分、結構和形貌特徵.實驗結果錶明,薄膜在(111)麵錶現齣明顯的擇優生長特性.在薄膜生長初期,納米薄膜中存在一定程度的非晶態富集Te,但隨著沉積時間延長,薄膜成分嚮化學計量比逼近,結構也嚮閃鋅礦CdZnTe轉變.薄膜錶麵形貌平整,粗糙度R_a約為2~5nm.隨著沉積時間的延長,薄膜形貌由晶粒堆砌狀嚮多晶層片連接狀轉變.在沉積時間分彆為15、30和45min時,薄膜的厚度依次分彆約為100、300和500nm,而薄膜的晶粒平均呎吋依次分彆為43.15、30.81和71.94nm.
채용진공증발침적기술재ITO파리상제비득도CdZnTe납미정박막,병이용태계의、X사선능보의(EDS)、X사선연사의(XRD)화원자력현미경(AFM)연구료CdZnTe박막후도、성분、결구화형모특정.실험결과표명,박막재(111)면표현출명현적택우생장특성.재박막생장초기,납미박막중존재일정정도적비정태부집Te,단수착침적시간연장,박막성분향화학계량비핍근,결구야향섬자광CdZnTe전변.박막표면형모평정,조조도R_a약위2~5nm.수착침적시간적연장,박막형모유정립퇴체상향다정층편련접상전변.재침적시간분별위15、30화45min시,박막적후도의차분별약위100、300화500nm,이박막적정립평균척촌의차분별위43.15、30.81화71.94nm.
Nano-crystalline CdZnTe films were grown on ITO glass by vacuum deposition method.The thickness,composition,surface morphology and structure were studied by the step profiler,the X-ray photoelectron spectroscopy (EDS),X-ray diffraction (XRD),atomic force microscope (AFM).The results showed that the films possess a preferable growth surface of (111).The films are rich in amorphous Te at the beginning of the growth,but tend to the stechiometric composition of zinc blend structure of CdZnTe crystal.The surface roughness (R_a) of the films was 2-5 nano-meters.With the increase of the time,the individual grains tend to form continues multi-grain layer.For the deposition time of 15,30 and 45min,the thickness of the film as measured to be 100,300 and 400nm,and the average size of the gain are 43.15,30.81 and 71.94nm respectively.