半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
4期
645-649
,共5页
静电感应晶闸管%SIT-BJT等效模型%电流放大因子
靜電感應晶閘管%SIT-BJT等效模型%電流放大因子
정전감응정갑관%SIT-BJT등효모형%전류방대인자
static induction thyristor%SIT-BJT model%current amplification factor
提出了一种描述静电感应晶闸管在阻断态时的工作机理的SIT-BJT等效模型.在器件物理的基础上,分析得到的这个模型衔接了静电感应晶闸管的物理参数和结构参数,而且给出的数值分析和理论分析证明了这个模型的正确性.在该模型的基础上,讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化.
提齣瞭一種描述靜電感應晶閘管在阻斷態時的工作機理的SIT-BJT等效模型.在器件物理的基礎上,分析得到的這箇模型銜接瞭靜電感應晶閘管的物理參數和結構參數,而且給齣的數值分析和理論分析證明瞭這箇模型的正確性.在該模型的基礎上,討論瞭勢壘、暘極結的電勢降落和電流的放大因子等電參數的變化.
제출료일충묘술정전감응정갑관재조단태시적공작궤리적SIT-BJT등효모형.재기건물리적기출상,분석득도적저개모형함접료정전감응정갑관적물리삼수화결구삼수,이차급출적수치분석화이론분석증명료저개모형적정학성.재해모형적기출상,토론료세루、양겁결적전세강락화전류적방대인자등전삼수적변화.
A SIT-BIT model is proposed for static induction thyristors (SITh) operation in the blocking state. On the basis of the physical mechanism, this model is presented analytically in terms of governing equations that link the electrical parameters to the structural parameters. The model is verified by numerical simulation and theoretical analysis. Based on the model,the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed.
