CAJ | 학술논문

采用溶胶-凝胶浸渍提拉法(Sol-Gel Dip-Coating, SGDC)制备SnO_2纳米晶薄膜气敏传感器.较系统地研究了掺杂量、镀膜层次和热处理温度等制备工艺对薄膜表面形貌、晶粒大小及气敏性能的影响.研究结果表明:铟的最佳掺杂量为4at%,最佳镀膜层数为7层,最佳热处理温度为600 ℃.气敏传感器最佳工作温度为165 ℃,在此工作温度下,薄膜的灵敏度分别为26.3(137 ppm H_2S)和2.5(2.74 ppm H_2S),薄膜的响应恢复时间较短分别为8 s和22 s,对H_2S气体有较好的选择性.
채용용효-응효침지제랍법(Sol-Gel Dip-Coating, SGDC)제비SnO_2납미정박막기민전감기.교계통지연구료참잡량、도막층차화열처리온도등제비공예대박막표면형모、정립대소급기민성능적영향.연구결과표명:인적최가참잡량위4at%,최가도막층수위7층,최가열처리온도위600 ℃.기민전감기최가공작온도위165 ℃,재차공작온도하,박막적령민도분별위26.3(137 ppm H_2S)화2.5(2.74 ppm H_2S),박막적향응회복시간교단분별위8 s화22 s,대H_2S기체유교호적선택성.
The nano-crystalline SnO_2 thin films doped with In/Sb were prepared by the sol-gel dip-coating (SGDC) method, using cheap inorganic salts and absolute ethanol as the starting materials. The effect of doping, coating and heat treatment temperature levels on film surface topography, grain size and gas-sensing properties were investigated. The results show that the best-doped indium volume is 4at%, the best layer is 7-layer coating, the best heat treatment temperature is 600 ℃. The best film elements operating temperature is 165 ℃, at this temperature under 137 ppm of H2_S in the film's sensitivity to reach 26.3; at the same time, the thin film of low concentration H2_S gas have better gas-sensing, in the 2.74 ppm of H2_S in sensitivity 2.5. Moreover, the film response time and recovery time of 8 s and 22 s for H2_S gas has high selective.