CAJ | 학술논문

利用热生长工艺和热蒸发方法分别获得CuPc和SiO2薄膜层,通过原子力显微镜和X射线光电子能谱对其表面界面电子状态进行了研究,并采用高斯拟合方法对各谱进行了详细分析.结果表明,在氧原子的作用下,N1s,C1s,O1s 和Cu2p都经受了一定的化学位移,从而使得各原子间的相互作用强度有所改变,这是导致OFET性能劣化的重要原因之一.对OFET而言,采用溅射工艺制备的SiO2层应比热氧化生长的SiO2层更合适.
이용열생장공예화열증발방법분별획득CuPc화SiO2박막층,통과원자력현미경화X사선광전자능보대기표면계면전자상태진행료연구,병채용고사의합방법대각보진행료상세분석.결과표명,재양원자적작용하,N1s,C1s,O1s 화Cu2p도경수료일정적화학위이,종이사득각원자간적상호작용강도유소개변,저시도치OFET성능열화적중요원인지일.대OFET이언,채용천사공예제비적SiO2층응비열양화생장적SiO2층경합괄.
A CuPc/SiO2 sample is fabricated.Its morphology is characterized by atomic force microscopy,and the electron states are investigated by X-ray photoelectron spectroscopy.In order to investigate these spectra in detail,all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function.Analysis shows that the O element has great bearing on the electron states and that SiO2 layers produced by spurting technology are better than those produced by oxidation technology.