基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计
기우AlGaN/GaN HEMT적C파단혼합집성공솔합성방대기적설계
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2007年 4期 514-517 ,共4页

    姚小江%李宾%陈延湖%陈小娟%魏珂%李诚瞻%罗卫军%王晓亮%刘丹%刘果果%刘新宇

    요소강%리빈%진연호%진소연%위가%리성첨%라위군%왕효량%류단%류과과%류신우

    AlGaN/GaN HEMT%功率合成器%混合集成电路%微波功率放大器 AlGaN/GaN HEMT%功率閤成器%混閤集成電路%微波功率放大器
    AlGaN/GaN HEMT%공솔합성기%혼합집성전로%미파공솔방대기
    AlGaN/GaN HEMTs%power combining%MIC%power amplifiers
    研制了一种基于AlGaN/GaN HEMT的功率合成技术的混合集成放大器电路.该电路包含4个10×120 μm的HEMT晶体管以及一个Wilkinson功率合成器和分配器.在偏置条件为VDS=40V,IDS=0.9A时,输出连续波饱和功率在5.4GHz达到41.4dBm,最大的PAE为32.54%,并且功率合成效率达到69%.
    연제료일충기우AlGaN/GaN HEMT적공솔합성기술적혼합집성방대기전로.해전로포함4개10×120 μm적HEMT정체관이급일개Wilkinson공솔합성기화분배기.재편치조건위VDS=40V,IDS=0.9A시,수출련속파포화공솔재5.4GHz체도41.4dBm,최대적PAE위32.54%,병차공솔합성효솔체도69%.
    A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120 μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency (PAE) of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
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