稀有金属材料与工程
稀有金屬材料與工程
희유금속재료여공정
RARE METAL MATERIALS AND ENGINEERNG
2009年
z1期
229-233
,共5页
雷贻文%孙荣禄%吴恩熙%唐英
雷貽文%孫榮祿%吳恩熙%唐英
뢰이문%손영록%오은희%당영
硬质合金%微观组织%晶粒长大%抑制机理
硬質閤金%微觀組織%晶粒長大%抑製機理
경질합금%미관조직%정립장대%억제궤리
cemented carbides%microstmcture%grain growth%mechanism
研究了VC/Cr3C2添加剂对WC-12Co超细硬质合金的显微组织、硬度和抗弯强度(TRS)的影响.结果表明,舍一定比例VC/Cr3C2添加剂的合金具有更均匀的微观组织和优异的力学性能.当添加剂含量(质量分数)为0.5%VC/0.2%Cr3C2时,1430℃烧结制备的WC-12Co超细硬质合金的抗弯强度达3786 MPa,硬度达91.7 HRA.VC添加剂对WC晶粒的连续长大和非连续长大的抑制作用比Cr3C2添加剂更有效.此外,当烧结温度较高时,VC/Cr3C2添加剂对WC晶粒长大的抑制效果更显著.VC和Cr3C2添加剂抑制WC晶粒长大的作用机理为:VC和Cr3C2添加剂降低了WC相在粘结相中的过饱和度,从而降低烧结温度下粘结相中WC相溶解-析出过程的驱动力,起到阻碍WC晶粒长大的作用.
研究瞭VC/Cr3C2添加劑對WC-12Co超細硬質閤金的顯微組織、硬度和抗彎彊度(TRS)的影響.結果錶明,捨一定比例VC/Cr3C2添加劑的閤金具有更均勻的微觀組織和優異的力學性能.噹添加劑含量(質量分數)為0.5%VC/0.2%Cr3C2時,1430℃燒結製備的WC-12Co超細硬質閤金的抗彎彊度達3786 MPa,硬度達91.7 HRA.VC添加劑對WC晶粒的連續長大和非連續長大的抑製作用比Cr3C2添加劑更有效.此外,噹燒結溫度較高時,VC/Cr3C2添加劑對WC晶粒長大的抑製效果更顯著.VC和Cr3C2添加劑抑製WC晶粒長大的作用機理為:VC和Cr3C2添加劑降低瞭WC相在粘結相中的過飽和度,從而降低燒結溫度下粘結相中WC相溶解-析齣過程的驅動力,起到阻礙WC晶粒長大的作用.
연구료VC/Cr3C2첨가제대WC-12Co초세경질합금적현미조직、경도화항만강도(TRS)적영향.결과표명,사일정비례VC/Cr3C2첨가제적합금구유경균균적미관조직화우이적역학성능.당첨가제함량(질량분수)위0.5%VC/0.2%Cr3C2시,1430℃소결제비적WC-12Co초세경질합금적항만강도체3786 MPa,경도체91.7 HRA.VC첨가제대WC정립적련속장대화비련속장대적억제작용비Cr3C2첨가제경유효.차외,당소결온도교고시,VC/Cr3C2첨가제대WC정립장대적억제효과경현저.VC화Cr3C2첨가제억제WC정립장대적작용궤리위:VC화Cr3C2첨가제강저료WC상재점결상중적과포화도,종이강저소결온도하점결상중WC상용해-석출과정적구동력,기도조애WC정립장대적작용.
Hardness, transverse rupture strength (TRS) and microstructures of VC, Cr3C2 codoped ultrafine WC-12Co were investigated. The results show that alloys with homogeneous microstructure and excellent properties were obtained when optimal proportion of additions was added. The TRS and hardness reach 3786 MPa and 91.7 HRA for the alloy with 0.5% Cr3C2/0.2%VC and sintered at 1430 ℃. VC is more effective at controlling continuous and discontinuous grain growth than Cr3C2, and the effectiveness of additions is more significant at higher sintering temperature. The mechanism of WC grain growth inhibition is that VC and Cr3C2 reduce the supersaturation of WC in the binder phase, decrease the driving force for WC grain growth firm reprecipitation process and retard WC gram growth.