CAJ | 학술논문

在硅衬底上利用电子束蒸发沉积了TiO_2薄膜,利用椭圆偏振仪测量了不同沉积温度下的TiO_2薄膜的折射率,发现其折射率随着沉积温度的升高而升高.利用X射线衍射(XRD)仪对这些薄膜的结构进行表征,发现折射率高的样品其结晶化程度也高.利用X射线光电子能谱(XPS)和傅立叶红外吸收谱(FT-IR)相结合的方法对薄膜的成分进行分析,发现内部存在低价态的钛氧化物,使薄膜的折射率明显低于固体块材料的折射率.
재규츤저상이용전자속증발침적료TiO_2박막,이용타원편진의측량료불동침적온도하적TiO_2박막적절사솔,발현기절사솔수착침적온도적승고이승고.이용X사선연사(XRD)의대저사박막적결구진행표정,발현절사솔고적양품기결정화정도야고.이용X사선광전자능보(XPS)화부립협홍외흡수보(FT-IR)상결합적방법대박막적성분진행분석,발현내부존재저개태적태양화물,사박막적절사솔명현저우고체괴재료적절사솔.
In this work TiO_2 films were prepared on silicon substrates by electron beam evaporation, and the refractive index of the films deposited at different temperature, were measured by ellipsometry. The results revealed that the refractive index was improved as increasing the deposition temperature. The structure and composition were characterized by XRD, XPS and FI-IR respectively. The XRD confirmed that the improvement of the refractive index is result from the improvement of the crystallization. And the XPS and Fi-IR confirmed that the refractive index is lower than that of bulk TiO_2 due to the presence of non-stoichiometry of TiO_((2-x)) and SiO_((2-x)).