半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年
3期
499-505
,共7页
李德尧%黄永箴%张书明%种明%叶晓军%朱建军%赵德刚%陈良惠%杨辉%梁骏吾
李德堯%黃永箴%張書明%種明%葉曉軍%硃建軍%趙德剛%陳良惠%楊輝%樑駿吾
리덕요%황영잠%장서명%충명%협효군%주건군%조덕강%진량혜%양휘%량준오
InGaN激光器%脊形波导%热模拟%阈值电流%斜率效率
InGaN激光器%脊形波導%熱模擬%閾值電流%斜率效率
InGaN격광기%척형파도%열모의%역치전류%사솔효솔
InGaN laser diodes%ridge waveguide%thermal simulation%threshold current%slope efficiency
利用含时二维热传导模型分析了蓝宝石衬底上生长、制作的脊形InGaN激光器内波导层的温度分布和时间演化规律.由于较大的阈值电流和电压以及较差的衬底导热性能,脊形下波导层内会产生较高温升并在脊形内外形成较大的温度台阶.由于脊形波导的弱自建波导特性,这一温度台阶会对侧向模式的限制产生较大的影响.短脉冲工作下的时间分辨L-I测试以及时间分辨远场和光谱测试结果显示,脊形内外的温度台阶会改善波导对高阶模的限制,导致器件的阈值电流下降,斜率效率升高.而有源区的温升又会导致斜率效率的严重下降.
利用含時二維熱傳導模型分析瞭藍寶石襯底上生長、製作的脊形InGaN激光器內波導層的溫度分佈和時間縯化規律.由于較大的閾值電流和電壓以及較差的襯底導熱性能,脊形下波導層內會產生較高溫升併在脊形內外形成較大的溫度檯階.由于脊形波導的弱自建波導特性,這一溫度檯階會對側嚮模式的限製產生較大的影響.短脈遲工作下的時間分辨L-I測試以及時間分辨遠場和光譜測試結果顯示,脊形內外的溫度檯階會改善波導對高階模的限製,導緻器件的閾值電流下降,斜率效率升高.而有源區的溫升又會導緻斜率效率的嚴重下降.
이용함시이유열전도모형분석료람보석츤저상생장、제작적척형InGaN격광기내파도층적온도분포화시간연화규률.유우교대적역치전류화전압이급교차적츤저도열성능,척형하파도층내회산생교고온승병재척형내외형성교대적온도태계.유우척형파도적약자건파도특성,저일온도태계회대측향모식적한제산생교대적영향.단맥충공작하적시간분변L-I측시이급시간분변원장화광보측시결과현시,척형내외적온도태계회개선파도대고계모적한제,도치기건적역치전류하강,사솔효솔승고.이유원구적온승우회도치사솔효솔적엄중하강.
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves, spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.
