CAJ | 학술논문

研究了测试频率为0.3～1.5MHz时GaN基肖特基器件的电容特性.实验发现,在Au/i-GaN肖特基器件的电容-电压(C-V)特性曲线中,出现了峰和负值电容,而Au/i-Al0.45Ga0.55N肖特基器件的C-V特性曲线中则既没有峰也没有负值电容的出现.对肖特基器件的电流-电压(I-V)特性和C-V特性进行参数提取和分析后认为,负值电容和峰的出现源于界面态的俘获和损耗,但较大的串联电阻将减弱界面态的作用.
연구료측시빈솔위0.3～1.5MHz시GaN기초특기기건적전용특성.실험발현,재Au/i-GaN초특기기건적전용-전압(C-V)특성곡선중,출현료봉화부치전용,이Au/i-Al0.45Ga0.55N초특기기건적C-V특성곡선중칙기몰유봉야몰유부치전용적출현.대초특기기건적전류-전압(I-V)특성화C-V특성진행삼수제취화분석후인위,부치전용화봉적출현원우계면태적부획화손모,단교대적천련전조장감약계면태적작용.
The capacitance-voltage (C-V) measurements of GaN-based Schottky diodes were carried out in the frequency range of 0.3～1.5MHz. Anomalous peaks and negative value of capacitance were observed in the C-V plots of Au/i-GaN Schottky diodes under forward bias, while neither of them was seen in the plots of Au/i-Al0.45Ga0.55N Schottky diodes. Based on the parameters extracted from the current-voltage (I-V) and C-V plots of GaN and Al0.45Ga0.55N Schottky diodes, the peak and negative capacitance are ascribed to the capture and loss of interface charges. These processes are greatly suppressed when there exists a huge series resistance in the diode.