CAJ | 학술논문

研究了不同注入电流、不同输出偏振度下,半导体光纤环形激光器输出光的混沌特性.分别采用时域观察法、C-C法、Wigner-ville分布时频分析法、最大Lyapunov指数法联合分析输出光的时域、频域统计特性.从而将激光器输出按偏振度划分为三类:偏振度在0%到20%,随着电流的增大,激光器输出偏振混沌激光,其类型发生阶跃性跳变;偏振度在30～80%,激光器输出仍以偏振混沌激光为主,其类型不随电流增大而发生跳变;偏振度趋于90～100%,激光器输出以强度混沌激光为主,偏振混沌光随着偏振度趋向100%而下降为零.利用虚假邻点法计算嵌入维数和回归图法重构吸引子,得到上述三种输出类型的复杂程度依次是:椭圆吸引子(6维)、方形吸引子(7维)、点形吸引子(5维).由此得出,半导体光纤环形激光器用于偏振混沌通信的最佳区域为:偏振度处于30%至80%,注入电流处于330 mA～550 mA.
연구료불동주입전류、불동수출편진도하,반도체광섬배형격광기수출광적혼돈특성.분별채용시역관찰법、C-C법、Wigner-ville분포시빈분석법、최대Lyapunov지수법연합분석수출광적시역、빈역통계특성.종이장격광기수출안편진도화분위삼류:편진도재0%도20%,수착전류적증대,격광기수출편진혼돈격광,기류형발생계약성도변;편진도재30～80%,격광기수출잉이편진혼돈격광위주,기류형불수전류증대이발생도변;편진도추우90～100%,격광기수출이강도혼돈격광위주,편진혼돈광수착편진도추향100%이하강위령.이용허가린점법계산감입유수화회귀도법중구흡인자,득도상술삼충수출류형적복잡정도의차시:타원흡인자(6유)、방형흡인자(7유)、점형흡인자(5유).유차득출,반도체광섬배형격광기용우편진혼돈통신적최가구역위:편진도처우30%지80%,주입전류처우330 mA～550 mA.
The chaotic characteristics of the outputs of the semiconductor fiber ring laser at different injected current and different degree of polarization (DOP) were investigated. The statistical properties in the time and frequency domains were studied by time domain watch,C-C method,Wigner-ville distribution (WVD) time-frequency analysis method and the largest Lyapunov exponents respectively. The ring laser outputs are therefore classified into three kinds: DOPs are between 0% and 20% ,the ring laser outputs polarization chaos and step changes theirs sorts, DOP approaches 90%～100%, the polarized chaos decrease into 0% and intensity chaos grow. The outputs change significantly and generate multiple changes in sorts; for the rest of DOPs, the outputs remains polarization chaos and don t change their sorts. With false nearest neighbors (FNN) method computing the embeding dimension and with return map method reconstructing the strange attractor,the complexity of the above-mentioned three kinds of outputs can be obtained,that is: Ellipse (6 dimension), Square (7 dimension) and point (5 dimension). So the suitable range for the polarization chaos communication system is recommended that DOPs are between 30% and 80% and injected currents are between 330 mA and 500 mA.