CAJ | 학술논문

系统研究了射频和甚高频下沉积微晶硅薄膜时沉积参数对薄膜质量的影响,并优化了沉积参数.在相同的沉积条件下,甚高频沉积速度明显大于射频沉积速度,并且制备出的太阳能电池效率同样高于射频沉积.一般情况下,当沉积速率提高时,沉积薄膜中存在大量悬挂键和Si-2H键等缺陷,会大大降低材料的光电性能,同样也会降低太阳能电池的效率.在保证材料的光电性能的前提下提高沉积速度,沉积参数需要优化.在系列优化沉积参数后,微晶硅沉积速率达到0.75 nm/s,在该沉积速率下,制备出的单结n-i-p结构的太阳能电池效率达到5.41%.
계통연구료사빈화심고빈하침적미정규박막시침적삼수대박막질량적영향,병우화료침적삼수.재상동적침적조건하,심고빈침적속도명현대우사빈침적속도,병차제비출적태양능전지효솔동양고우사빈침적.일반정황하,당침적속솔제고시,침적박막중존재대량현괘건화Si-2H건등결함,회대대강저재료적광전성능,동양야회강저태양능전지적효솔.재보증재료적광전성능적전제하제고침적속도,침적삼수수요우화.재계렬우화침적삼수후,미정규침적속솔체도0.75 nm/s,재해침적속솔하,제비출적단결n-i-p결구적태양능전지효솔체도5.41%.
The deposition parameters of microerystalline thin films by RF-PECVD and VHF-PECVD are systemati- cally studied. Under similar conditions, the deposition rate of μc-Si: H thin films is higher by VHF-PECVD than byRF-PECVD. With deposition rate successively enhanced by VHF-PECVD, μc-Si: H solar cell efficiency is also im-proved. Generally, when deposition rate increases, dangling bonds related defects also increase, which is detrimen-tal to solar cell performance. In order to increase deposition rate while keeping defects low, the deposition parame-ters are thoroughly investigated. Kept the deposition parameters as 0.75 nm/s, μc-Si: H solar cells are also fabrica-ted and an initial efficiency of 5.41% is achieved.