CAJ | 학술논문

研究了一种采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管.采用了U型发射极图形结构、选择性湿法腐蚀、LEU以及空气桥等技术,成功制作了U型发射极尺寸为2μm×12μm的器件.该器件的共射直流增益达到170,残余电压约为0.2V,膝点电压仅为0.5V,而击穿电压超过了2V.器件的截止频率达到85GHz,最大振荡频率为72GHz,这些特性使此类器件更适合于低压、低功耗及高频方面的应用.
연구료일충채용신적T형발사겁기술적자대준InP/GaInAs단이질결쌍겁정체관.채용료U형발사겁도형결구、선택성습법부식、LEU이급공기교등기술,성공제작료U형발사겁척촌위2μm×12μm적기건.해기건적공사직류증익체도170,잔여전압약위0.2V,슬점전압부위0.5V,이격천전압초과료2V.기건적절지빈솔체도85GHz,최대진탕빈솔위72GHz,저사특성사차류기건경괄합우저압、저공모급고빈방면적응용.
A self-aligned InP/GaInAs single heterojunction bipolar transistor(HBT) is investigated using a novel T-shaped emitter. A U-shaped emitter layout, selective wet etching, laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm × 12μm U-shaped emitter area, demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V,and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz. These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage, low-power, and high-frequency applications.