CAJ | 학술논문

目的探讨低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效.方法采用JAM-II型多功能半导体激光治疗仪(激光物质为GaA1As,激光波长650nm)对22例不同程度的义眼座暴露患者进行激光照射治疗,并将结果与既往采用药物及手术治疗的20例义眼座暴露患者比较.结果激光组22例全部愈合(100%);药物及手术组中轻、中、重度的愈合率分别为83.3%,63.6%和0.经采用X2检验之四格表精确检验法处理,2组间轻度患者的愈合率在统计学上差异无显著性意义(P=0.545),而2组间中度和重度患者的愈合率在统计学上差异有显著性意义(P＜0.05).结论低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效优于药物及手术方法.可用于预防及治疗羟基磷灰石义眼座暴露.
목적탐토저공솔반도체격광치료간기린회석의안좌폭로적료효.방법채용JAM-II형다공능반도체격광치료의(격광물질위GaA1As,격광파장650nm)대22례불동정도적의안좌폭로환자진행격광조사치료,병장결과여기왕채용약물급수술치료적20례의안좌폭로환자비교.결과 격광조22례전부유합(100%);약물급수술조중경、중、중도적유합솔분별위83.3%,63.6%화0.경채용X2검험지사격표정학검험법처리,2조간경도환자적유합솔재통계학상차이무현저성의의(P=0.545),이2조간중도화중도환자적유합솔재통계학상차이유현저성의의(P＜0.05).결론저공솔반도체격광치료간기린회석의안좌폭로적료효우우약물급수술방법.가용우예방급치료간기린회석의안좌폭로.
Aim To evaluate the value of low energy level of semiconductor laser irradiation in treatment of exposured hydroxyapatite orbital implants. Methods Twenty-two patients who suffered from the exposure were treated with multifunctional semiconductor laser therapy apparatus. They were divided into 3 groups according to the size of the exposure zone (vertical diameter: mild, ≤ 3mm; moderate:4-7mm; severe: 8-10mm). Every patient was treated for 5 minutes per day for 5 to 15 days. And the results were compared with another 20 patients suffering from the same disease who were treated by pharmacotherapy and/or operative therapy. Results All of the 22 patients treated by laser therapy were cured (100%), while the cure rates of the control who was further divided according to the severity of exposure size, i.e. mild, moderate and severe, were 83.3%, 63.6% and 0 respectively. So laser therapy was statistically superior to pharmacotherapy and/or operative therapy in the treatment of moderate and severe states of exposure. Conclusion Laser therapy is more effective than pharmacotherapy and/or operative therapy in treatment of the exposed hydroxyapatite orbital implants. Laser therapy can prevent the enlargement of the exposure zone.