液晶与显示
液晶與顯示
액정여현시
CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS
2001年
2期
129-134
,共6页
纪世阳%李牧菊%杨柏梁
紀世暘%李牧菊%楊柏樑
기세양%리목국%양백량
轻掺杂%多晶硅薄膜晶体管%同型结%热电子%漏电流
輕摻雜%多晶硅薄膜晶體管%同型結%熱電子%漏電流
경참잡%다정규박막정체관%동형결%열전자%루전류
lightly-doped-drain%polysilicon thin film transistor%homojunction%hot carrier%leakage current
采用同型结模型模拟计算了源漏轻掺杂结构的关态漏极电流， 同时考虑热电子效应修正漏极电流模拟结果， 使漏极电流降低到10-11A量级， 晶体管的开关电流比值达到106量级。 模拟研究掺杂区浓度和宽度与多晶硅薄膜晶体管开关电流比的变化关系。
採用同型結模型模擬計算瞭源漏輕摻雜結構的關態漏極電流， 同時攷慮熱電子效應脩正漏極電流模擬結果， 使漏極電流降低到10-11A量級， 晶體管的開關電流比值達到106量級。 模擬研究摻雜區濃度和寬度與多晶硅薄膜晶體管開關電流比的變化關繫。
채용동형결모형모의계산료원루경참잡결구적관태루겁전류， 동시고필열전자효응수정루겁전류모의결과， 사루겁전류강저도10-11A량급， 정체관적개관전류비치체도106량급。 모의연구참잡구농도화관도여다정규박막정체관개관전류비적변화관계。
purpose of reducing the p-Si TFT off-state current, the structures of lightly doped drain (LDD) were used. Applying a homojunction model of semiconductor theory and considering the off-state current modified by hot carrier effect, the static-characteristics of LDD p-Si TFT were simulated. The on/off current switching ratios of p-Si TFT were investigated by a series of LDD doping concentrations and lengths.The LDD structures reduce TFT′s off-state current to 10-11 A and increase the on/off current switching ratios of p-Si TFT to 106. The results will be valuable referencepoints for designing and fabricating of p-Si TFT.
