哈尔滨师范大学自然科学学报
哈爾濱師範大學自然科學學報
합이빈사범대학자연과학학보
NATURAL SCIENCES JOURNAL OF HARBIN NORMAL UNIVERSITY
2000年
5期
16-18
,共3页
张伟力%马丛笑%郑才平%张喜田
張偉力%馬叢笑%鄭纔平%張喜田
장위력%마총소%정재평%장희전
光致发光%激发光谱%量子阱%激光制冷%上转换
光緻髮光%激髮光譜%量子阱%激光製冷%上轉換
광치발광%격발광보%양자정%격광제랭%상전환
Photoluminescence%Photoluminescence excitation spectra%Quantum well%Laser cooling%Up-conversion
我们利用光致发光(PL)和激发光谱(PIE)技术研究了GaAs量子阱的光谱性质，观测到在GaAs量子阱中上转换发光，首次提出在GaAs量子阱中可能实现激光制冷，探索了光谱的发光机理.
我們利用光緻髮光(PL)和激髮光譜(PIE)技術研究瞭GaAs量子阱的光譜性質，觀測到在GaAs量子阱中上轉換髮光，首次提齣在GaAs量子阱中可能實現激光製冷，探索瞭光譜的髮光機理.
아문이용광치발광(PL)화격발광보(PIE)기술연구료GaAs양자정적광보성질，관측도재GaAs양자정중상전환발광，수차제출재GaAs양자정중가능실현격광제랭，탐색료광보적발광궤리.
The spectral properties in GaAs-Ga0.65Al0.35As multi-quantum well structures have been developed by using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, the up-conversion of luminescence in GaAs-Ga0.65Al0.35As multiquantum wells is observed. We put forward the possibility of laser cooling in semiconductor GaAs MQW for the first time, the mechanism of luminescence on the spectrum in GaAs MQW is researched.
