CAJ | 학술논문

研究了硅锗合金的氧化行为,首次发现快氧化生成的锗纳米膜复盖在氧化层上.在PL谱中,我们发现与锗纳米结构相关的一些新的谱峰.量子受限模型和新的算法被给出,较好地解释了PL谱的分布和形成机理.
연구료규타합금적양화행위,수차발현쾌양화생성적타납미막복개재양화층상.재PL보중,아문발현여타납미결구상관적일사신적보봉.양자수한모형화신적산법피급출,교호지해석료PL보적분포화형성궤리.
Author investigate the oxidation behavior of Si1- xGex alloys (x = 0.05,0.15 and 0.25 ). We have found a nanocap on the oxide film after fast oxidation, in which there are many Ge nanoparticles.Some new peaks in PL spectra related to the Ge nanocap, the Ge nanolayer and the Ge nanoparticles in various diameters are discovered. Some suitable model and several new calculating formulas with combining UHFR method and quantum confinement analysis can be provided to interprete the PL spectra and the nanostructure mechanism in the oxide and Ge segregation.