CAJ | 학술논문

在载玻片或ITO涂覆的玻璃上采用化学热解法沉积CdS固体薄膜,沉积温度在350～540℃之间.部分制备的CdS薄膜进行200～600℃的退火热处理.由SEM,AFM和XRD分析测量退火热处理前后的CdS薄膜的微观结构.结果表明,沉积温度低于540℃以下制备的CdS薄膜具有类六方结构相,当高于540℃沉积的CdS薄膜则显示纤锌矿相.在400℃化学热解沉积的CdS薄膜经高于500℃的后热处理也可获得纤锌矿相.CdS薄膜的晶粒尺寸依赖于沉积温度及不同基体的情况也在本文中进行了讨论.
재재파편혹ITO도복적파리상채용화학열해법침적CdS고체박막,침적온도재350～540℃지간.부분제비적CdS박막진행200～600℃적퇴화열처리.유SEM,AFM화XRD분석측량퇴화열처리전후적CdS박막적미관결구.결과표명,침적온도저우540℃이하제비적CdS박막구유류륙방결구상,당고우540℃침적적CdS박막칙현시섬자광상.재400℃화학열해침적적CdS박막경고우500℃적후열처리야가획득섬자광상.CdS박막적정립척촌의뢰우침적온도급불동기체적정황야재본문중진행료토론.
CdS solid thin films were prepared on the substrates of slide glass or ITO coated glass by using chemical pyrolysis deposition technique(CPD) at different deposition temperature from 350 to 540℃ during film growth. Some of the prepared CdS films were undergone thermal annealing treatments at temperature from 200 to 600℃. The microstructures of as-deposited CdS films before and after thermal annealing were investigated with SEM, AFM and XRD measurements.It is found that hexagonal structure-like phase can be obtained for CdS films prepared with CPD when the deposition temperature is below 540℃. Wurtzite phase appears when CdS films are prepared at deposition temperature higher than 540℃, or the CdS films are prepared with CPD at deposition temperature of 400℃ and post-annealed at the temperature above 500℃. The grain size of CdS films, which is dependent on deposition temperature and on different substrates, is also discussed.