CAJ | 학술논문

本文对注N、注F的SIMOX/NMOSFET器件的抗辐射特性进行了研究,发现两者都能减少埋氧层及其界面的空穴陷阱,对辐射加固有所改善,特别是对大剂量辐射的加固更为明显.总体来说,在此能量下,离子注入剂量越大,加固越好.由于注入的剂量对片子本身的阈值电压有很大影响,所以选择对于器件初始特性影响较小的剂量及能量非常重要.
본문대주N、주F적SIMOX/NMOSFET기건적항복사특성진행료연구,발현량자도능감소매양층급기계면적공혈함정,대복사가고유소개선,특별시대대제량복사적가고경위명현.총체래설,재차능량하,리자주입제량월대,가고월호.유우주입적제량대편자본신적역치전압유흔대영향,소이선택대우기건초시특성영향교소적제량급능량비상중요.
Radiation hardness of SIMOX (separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper. Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions, which consequently improves the radiation hardness, especially under high dose radiation conditions. Moreover, experimental data show that the higher dose of the N and F ion implantation is, the better radiation hardness is achieved. In order to minimize the influence on the threshold voltage of devices, it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.