CAJ | 학술논문

用磁控溅射方法制备的ZnS薄膜作为有机发光器件(OLEDs)的空穴缓冲层,使典型结构的 OLEDs(ITO/TPD/Alq/LiF/Al) 的发光性能得到改善.ZnS 缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为 5 nm 时,器件的亮度增加了2倍多;当ZnS缓冲层厚度为5、10 nm时,器件的发光电流效率增加40%.研究结果表明 ZnS 薄膜是一种好的缓冲层材料,它能够提高器件的发光效率,改善器件的稳定性.
용자공천사방법제비적ZnS박막작위유궤발광기건(OLEDs)적공혈완충층,사전형결구적 OLEDs(ITO/TPD/Alq/LiF/Al) 적발광성능득도개선.ZnS 완충층후도대기건성능영향적실험결과표명,당ZnS완충층후도위 5 nm 시,기건적량도증가료2배다;당ZnS완충층후도위5、10 nm시,기건적발광전류효솔증가40%.연구결과표명 ZnS 박막시일충호적완충층재료,타능구제고기건적발광효솔,개선기건적은정성.
An organic light-emitting diodes (OLEDs) using ZnS thin film by RF magnetron sputtering as a hole buffer layer were prepared. With the presence of the buffer layer, the devices using the typical struc-ture of ITO/TPD/Alq/LiF/Al performed a good electroluminescent properties compared with the devices without ZnS buffer layer. The investigation on the effects of the ZnS thickness showed that the device with 5 nm ZnS buffer layer double its luminance under driven voltage 20 V, and the current efficiency of the de-vices with 5 and 10 nm ZnS is improved by about a factor of forty percent compared with the devices with-out buffer layer. The results suggested that ZnS may be a good anode buffer layer material and can improve the efficiency and stability of OLEDs.