CAJ | 학술논문

本文采用LPCVD技术在高温条件下,利用甲烷和氢气混合气体作为碳源,在n-Si(111)衬底上制备3C-SiC薄膜.通过XRD、XPS、SEM、FT-IR和PL研究发现:温度对3C-SiC薄膜的形貌和晶体质量有较大的影响,并且生长温度对3C-SiC薄膜的780 cm~(-1)左右的FT-IR反射峰强度影响非常大;在室温测试条件下,3C-SiC薄膜有较强的蓝光波段的荧光峰.
본문채용LPCVD기술재고온조건하,이용갑완화경기혼합기체작위탄원,재n-Si(111)츤저상제비3C-SiC박막.통과XRD、XPS、SEM、FT-IR화PL연구발현:온도대3C-SiC박막적형모화정체질량유교대적영향,병차생장온도대3C-SiC박막적780 cm~(-1)좌우적FT-IR반사봉강도영향비상대;재실온측시조건하,3C-SiC박막유교강적람광파단적형광봉.
In this article,the 3C-SiC film grown on Si substrate by LPCVD,using methane and hydrogen gas mixture as carbon source,has been studied.The 3C-SiC film was characterized by XRD,XPS、SEM、FT-IR and PL spectroscopy.It was found that the morphology and the crystal quality of 3C-SiC thin film were influenced by the growth temperature.and that the FT-IR reflection peak intensity of 780 cm~(-1) was also influeneed by the growth temperature on the 3C-SiC film;at room temperature,there are a strong blue band fluorescence peak of the 3C-SiC thin film.