侧向外延法生长的高质量GaN及其外延缺陷的观察
측향외연법생장적고질량GaN급기외연결함적관찰
High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation
  • 万方数据
    发光学报 발광학보
    CHINESE JOURNAL OF LUMINESCENCE
    2005年 1期 72-76 ,共5页

    杨志坚%胡晓东%章蓓%陆敏%陆羽%潘尧波%张振声%任谦%徐军%李忠辉%陈志忠%秦志新%于彤军%童玉珍%张国义

    양지견%호효동%장배%륙민%륙우%반요파%장진성%임겸%서군%리충휘%진지충%진지신%우동군%동옥진%장국의

    氮化镓%侧向外延生长%金属有机化学气相沉积 氮化鎵%側嚮外延生長%金屬有機化學氣相沉積
    담화가%측향외연생장%금속유궤화학기상침적
    GaN%ELO%MOCVD
    在有条状SiO2图形的GaN"模板"上,侧向外延方法生长了高质量的GaN.荧光显微镜的结果表明在SiO2掩膜区有成核过程发生.原因可能是SiO2的质量不高,为GaN的生长提供了一些成核中心.在GaN层的厚度达到4.5μm后,侧向的融合开始发生.侧向生长的速度与垂直生长速度几乎相同.在所有的SiO2掩膜上方都形成了空洞.样品在240℃熔融的KOH中腐蚀13min.在SiO2掩膜区生长的GaN,其腐蚀坑密度(相当于穿透位错密度)减少到几乎为零.而在窗口区生长的GaN,腐蚀坑密度仍然很高,达到108cm-2量级.同时,我们发现具有不同窗口尺寸的样品在SiO2掩膜区上侧向生长的GaN的晶体质量基本相同,与窗口区的宽度几乎无关.室温光荧光结果表明侧向外延法生长的GaN中的晶格失配应力已被部分释放.
    재유조상SiO2도형적GaN"모판"상,측향외연방법생장료고질량적GaN.형광현미경적결과표명재SiO2엄막구유성핵과정발생.원인가능시SiO2적질량불고,위GaN적생장제공료일사성핵중심.재GaN층적후도체도4.5μm후,측향적융합개시발생.측향생장적속도여수직생장속도궤호상동.재소유적SiO2엄막상방도형성료공동.양품재240℃용융적KOH중부식13min.재SiO2엄막구생장적GaN,기부식갱밀도(상당우천투위착밀도)감소도궤호위령.이재창구구생장적GaN,부식갱밀도잉연흔고,체도108cm-2량급.동시,아문발현구유불동창구척촌적양품재SiO2엄막구상측향생장적GaN적정체질량기본상동,여창구구적관도궤호무관.실온광형광결과표명측향외연법생장적GaN중적정격실배응력이피부분석방.
    High quality GaN is grown by epitaxial lateral overgrowth(ELO) technique on SiO2-pattemed GaN "template". The results from luminescence microscope observation reveal that nucleation happens on the SiO2 mask. After the thickness reaches about 4.5 μm, the coalescence starts. The lateral growth rate is almost the same as the vertical growth rate. Voids are formed on all of the SiO2 mask area. ELO GaN is etched in molten KOH for 13 min at 240 ℃.The threading dislocation density is reduced to almost zero in the area on mask. And the threading dislocation density is still high in the area on windows. It is the order of 108cm-2. Also we found that the qualities in masks area for samples with different window area size are similar and have no relation with window area size. The room temperature photoluminescence (PL) results indicate that the stress in ELO GaN has been released partially.
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