CAJ | 학술논문

研究了原位退火对用氢化物外延方法在(0001)面蓝宝石衬底上生长的氮化镓(GaN)外延薄膜的结构和光学性能的影响.测试表明,氨气气氛下在生长温度进行的原位退火,明显提高了GaN外延膜的质量.X射线衍射(XRD)分析表明,随着原位退火时间的增加,(0002)面和(1012)面摇摆曲线的半峰宽逐渐变窄.喇曼散射谱显示样品退火后E2(high)峰位向低频区移动;随着退火时间的延长,趋向于块状GaN的峰位.可见,原位退火使GaN外延膜中的双轴应力明显减少.光致发光的测试结果与XRD和喇曼散射谱的结论一致.表明原位退火能有效提高GaN外延膜的结构和光学性能.
연구료원위퇴화대용경화물외연방법재(0001)면람보석츤저상생장적담화가(GaN)외연박막적결구화광학성능적영향.측시표명,안기기분하재생장온도진행적원위퇴화,명현제고료GaN외연막적질량.X사선연사(XRD)분석표명,수착원위퇴화시간적증가,(0002)면화(1012)면요파곡선적반봉관축점변착.나만산사보현시양품퇴화후E2(high)봉위향저빈구이동;수착퇴화시간적연장,추향우괴상GaN적봉위.가견,원위퇴화사GaN외연막중적쌍축응력명현감소.광치발광적측시결과여XRD화나만산사보적결론일치.표명원위퇴화능유효제고GaN외연막적결구화광학성능.
Effects of in situ annealing on the structural and optical properties of Gallium nitride (GaN) layers grown on (0001) sapphire by hydride vapor phase epitaxy (HVPE) are studied. The properties of GaN epilayers are improved by in-situ annealing at growth temperature under ammonia (NH3) atmosphere. X-ray diffraction (XRD) analysis shows that the full width at half maximum (FWHM) of the rocking curves narrows as the annealing time increases. Raman scattering spectroscopy shows that E2 (high) peak positions shift to the low frequency region. Compared to without annealing and epilayers annealed with bulk GaN,the E2 (high) peak position of epilayers becomes closer to that of bulk GaN as the in situ annealing time increases. The biaxial compressive stress decreases after in situ annealing. Photoluminescence (PL) ex- amination agrees well with XRD and Raman scattering analyses. These results suggest that the optical and structural prop- erties of GaN epilayers can be improved by in situ annealing.