电子器件
電子器件
전자기건
JOURNAL OF ELECTRON DEVICES
2010年
5期
561-564
,共4页
可缩放模型%锗硅HBT%HICUM模型
可縮放模型%鍺硅HBT%HICUM模型
가축방모형%타규HBT%HICUM모형
scalable model%SiGe HBT%HICUM model
针对高速锗硅异质结双极性晶体管,在基于HICUM模型的基础上,建立了HICUM可缩放模型,并且在ADS和Hspice中都得到了很好的应用.可缩放模型是基于不同的尺寸的器件而建立的,所有可缩放模型中的参数都是直接从不同尺寸器件的测量数据中取得的,并且通过比较直流、电压电容关系、截止频率和S参数的测量和仿真数据,可以看出拟合结果比较好,HICUM可缩放模型得到了很好的验证.
針對高速鍺硅異質結雙極性晶體管,在基于HICUM模型的基礎上,建立瞭HICUM可縮放模型,併且在ADS和Hspice中都得到瞭很好的應用.可縮放模型是基于不同的呎吋的器件而建立的,所有可縮放模型中的參數都是直接從不同呎吋器件的測量數據中取得的,併且通過比較直流、電壓電容關繫、截止頻率和S參數的測量和倣真數據,可以看齣擬閤結果比較好,HICUM可縮放模型得到瞭很好的驗證.
침대고속타규이질결쌍겁성정체관,재기우HICUM모형적기출상,건립료HICUM가축방모형,병차재ADS화Hspice중도득도료흔호적응용.가축방모형시기우불동적척촌적기건이건립적,소유가축방모형중적삼수도시직접종불동척촌기건적측량수거중취득적,병차통과비교직류、전압전용관계、절지빈솔화S삼수적측량화방진수거,가이간출의합결과비교호,HICUM가축방모형득도료흔호적험증.
A scalable HICUM model for high-speed SiGe HBTs is developed based on HICUM model. This model is well applied to simulation software of ADS and Hspice. The scaling is mainly based on different physical dimension of individual devices, all the scalable parameters in the scalable equations are extracted directly from the measurement data of various geometry. The correctness of this scalable model is further verified by the quite good fit between measured and simulated results on DC, CV, Ft and S parameters at the frequency up to 30 GHz.