半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2005年
1期
11-15
,共5页
GaAs光电导开关%超宽带微波%飞秒激光脉冲
GaAs光電導開關%超寬帶微波%飛秒激光脈遲
GaAs광전도개관%초관대미파%비초격광맥충
GaAs photoconductive switch%ultra-wideband microwave%femto-second laser pulse
报道了用飞秒激光脉冲触发GaAs光电导开关产生超短电磁脉冲辐射超宽带电磁波的实验结果,分析了超短电脉冲串经宽带天线的辐射特性.在接收端获得了上升时间200ps、脉冲宽度500ps、重复频率82MHz的超短电脉冲串和经宽带天线辐射的超宽带电磁波波形,其电磁波频谱覆盖4.7MHz~14GHz.
報道瞭用飛秒激光脈遲觸髮GaAs光電導開關產生超短電磁脈遲輻射超寬帶電磁波的實驗結果,分析瞭超短電脈遲串經寬帶天線的輻射特性.在接收耑穫得瞭上升時間200ps、脈遲寬度500ps、重複頻率82MHz的超短電脈遲串和經寬帶天線輻射的超寬帶電磁波波形,其電磁波頻譜覆蓋4.7MHz~14GHz.
보도료용비초격광맥충촉발GaAs광전도개관산생초단전자맥충복사초관대전자파적실험결과,분석료초단전맥충천경관대천선적복사특성.재접수단획득료상승시간200ps、맥충관도500ps、중복빈솔82MHz적초단전맥충천화경관대천선복사적초관대전자파파형,기전자파빈보복개4.7MHz~14GHz.
The experiment results of ultrawide band electromagnetic radiation with DC biased GaAs photoconductive semiconductor switch combining double ridge horn antenna triggered by high repeat frequency femto-second laser pulse are reported.The GaAs switches are insulated by solid multi-layer transparent dielectrics and the distance of two electrodes is 3mm.The electrode material of the switch is ohmic contact through alloy technics with definite proportion of Au/Ge/Ni.This switch and double ridge horn antenna are integrated and the receive antenna is connected with the test instrument.From receiving antenna,ultra fast electrical pulse of 200ps rise time and 500ps pulse width is obtained,the repetition rate of the pulse is about 82MHz and the frequency spectrum is in the range of 4.7MHz~14GHz.The radiation characteristic of the ultrafast electrical pulse is analyzed.