半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
1期
68-71
,共4页
孙业林%刘玉岭%刘效岩%魏恒%谢竹石
孫業林%劉玉嶺%劉效巖%魏恆%謝竹石
손업림%류옥령%류효암%위항%사죽석
两步抛光法%去除速率%粗糙度%氧化剂%抛光压力
兩步拋光法%去除速率%粗糙度%氧化劑%拋光壓力
량보포광법%거제속솔%조조도%양화제%포광압력
two-step polishing methods%polishing rate%roughness%oxidizer%polishing pressure
在对硬盘基板CMP机理进行分析后,采用河北工业大学研制的计算机硬盘抛光专用碱性抛光液,选择氧化剂添加量、抛光压力两个重要参数分别进行实验,讨论它们在两步抛光方法中的重要作用.总结实验结果后,得出了上述两个参数在两步抛光方法中的影响规律,提出粗抛光中,应该采用较高氧化剂添加量和抛光压力以得到较高的去除速率和一定的表面质量;精抛光中,应该采用低氧化剂含量、低抛光压力以得到较完美的表面质量.用此方法抛光,较好地解决了当前硬盘基板加工中抛光速率与表面质量之间的矛盾.
在對硬盤基闆CMP機理進行分析後,採用河北工業大學研製的計算機硬盤拋光專用堿性拋光液,選擇氧化劑添加量、拋光壓力兩箇重要參數分彆進行實驗,討論它們在兩步拋光方法中的重要作用.總結實驗結果後,得齣瞭上述兩箇參數在兩步拋光方法中的影響規律,提齣粗拋光中,應該採用較高氧化劑添加量和拋光壓力以得到較高的去除速率和一定的錶麵質量;精拋光中,應該採用低氧化劑含量、低拋光壓力以得到較完美的錶麵質量.用此方法拋光,較好地解決瞭噹前硬盤基闆加工中拋光速率與錶麵質量之間的矛盾.
재대경반기판CMP궤리진행분석후,채용하북공업대학연제적계산궤경반포광전용감성포광액,선택양화제첨가량、포광압력량개중요삼수분별진행실험,토론타문재량보포광방법중적중요작용.총결실험결과후,득출료상술량개삼수재량보포광방법중적영향규률,제출조포광중,응해채용교고양화제첨가량화포광압력이득도교고적거제속솔화일정적표면질량;정포광중,응해채용저양화제함량、저포광압력이득도교완미적표면질량.용차방법포광,교호지해결료당전경반기판가공중포광속솔여표면질량지간적모순.
After the analysis of CMP theory, dedicated slurry of hard disk developed by Hebei University of Technology were selected in this experiment. An experiment were designed with two important parameters contained polishing pressure and volume of oxidizer. The higher polishing rate and better surface quality are achieved by means of larger volume of oxidizer and higher polishing pressure in rough polishing;relatively, perfect surface quality are attained by means of lower volume of oxidizer and lower polishing pressure in fine polishing. By the combined method, the contradictions between polishing rate and surface quality in processing of hard disk are solved effectively.