CAJ | 학술논문

天线结构是监控半导体工艺过程中等离子体损伤的一种典型结构，一般主要用来监控MOS器件栅氧的损伤。文中，该结构用来监控横向PNP（LPNP）管工艺过程中的发射极结损伤。实验发现，带天线结构的LPNP管的输出曲线容易出现翘曲现象，分析认为该异常不是由于发射极结损伤造成的，因为发射极结工艺过程中并没有受到损伤。同时发现该翘曲现象在LPNP管保护环接低电位时会消失，该低电位在很大范围内变化时，输出曲线基本一致，且输出曲线电流较保护环悬空时的电流整体偏大，在集电极电压较大时，输出电流和保护环悬空时的电流一致。
천선결구시감공반도체공예과정중등리자체손상적일충전형결구，일반주요용래감공MOS기건책양적손상。문중，해결구용래감공횡향PNP（LPNP）관공예과정중적발사겁결손상。실험발현，대천선결구적LPNP관적수출곡선용역출현교곡현상，분석인위해이상불시유우발사겁결손상조성적，인위발사겁결공예과정중병몰유수도손상。동시발현해교곡현상재LPNP관보호배접저전위시회소실，해저전위재흔대범위내변화시，수출곡선기본일치，차수출곡선전류교보호배현공시적전류정체편대，재집전겁전압교대시，수출전류화보호배현공시적전류일치。
Antenna structure is the typical method that monitors plasma damage during semiconductor manufacture process. Generally, this structure is used for monitoring MOS transistor gate oxide damage in plasma process. In this paper, the structure is used to monitor the process damage to LPNP transistor emitter junction. Experiment shows that the output IV curve of LPNP transistor with antenna appears kink effect. It is not considered as a result of emitterljunction damage and the process does no damage to the emitter junction. The kink effect will disappear with the guard ring connected with low voltage potential. The guard ring voltage potential varies in wide range, but the output IV curve shows no difference. The current with guard ring connected with low potential is bigger than that with guard ring floating. With the collector voltage increasing, the current is equal to each other.