河南科学
河南科學
하남과학
HENAN SCIENCE
2006年
6期
781-789
,共9页
严正香%陈守信%韩小森
嚴正香%陳守信%韓小森
엄정향%진수신%한소삼
拟中性极限%飘流扩散方泊松程组%p-n结%半导体
擬中性極限%飄流擴散方泊鬆程組%p-n結%半導體
의중성겁한%표류확산방박송정조%p-n결%반도체
quasineutral limit%drift-diffusion-Poisson equations%p-n junction%semiconductors
研究了模拟带p-n结的绝缘半导体器件的双极飘流扩散方程组的德拜长度、消失极限(拟中性极限).同时给出了扩散方程组的极限解.
研究瞭模擬帶p-n結的絕緣半導體器件的雙極飄流擴散方程組的德拜長度、消失極限(擬中性極限).同時給齣瞭擴散方程組的極限解.
연구료모의대p-n결적절연반도체기건적쌍겁표류확산방정조적덕배장도、소실겁한(의중성겁한).동시급출료확산방정조적겁한해.
In this paper the vanishing Debye length limit (space charge neutral limit) of the bipolar drift-diffusionequations modelling insulated semiconductor devices with p-n junctions (i.e. with a fixed bipolar backgroundcharge) is studied. The limit solution of the drift-diffusion equations is also presented here.
