CAJ | 학술논문

设计了一种温度系数可调的带隙基准源,利用控制PTAT电流的大小产生具有不同温度系数的基准电压,仅采用两个双极型晶体管,具有较好的电源噪声抑制特性.与传统方法相比,简化了电路结构,减小了占用芯片面积,改善了版图设计的对称性.该电路在更宽的调节范围内,通过4位控制信号可实现16级的温度系数调节,同时通过设计专门电路提高了电源噪声抑制比.采用0.35 μm CMOS工艺实现了该带隙基准源.仿真结果表明,基准电压的温度系数可在-1.76～+1.84 mV/℃范围内进行调节,低频时基准电压的PSRR达到-110 dB.
설계료일충온도계수가조적대극기준원,이용공제PTAT전류적대소산생구유불동온도계수적기준전압,부채용량개쌍겁형정체관,구유교호적전원조성억제특성.여전통방법상비,간화료전로결구,감소료점용심편면적,개선료판도설계적대칭성.해전로재경관적조절범위내,통과4위공제신호가실현16급적온도계수조절,동시통과설계전문전로제고료전원조성억제비.채용0.35 μm CMOS공예실현료해대극기준원.방진결과표명,기준전압적온도계수가재-1.76～+1.84 mV/℃범위내진행조절,저빈시기준전압적PSRR체도-110 dB.
A bandgap reference(BGR) with adjustable temperature coefficient was designed.By controlling PTAT current, the temperature coefficient of reference voltage can be adjus-ted from positive to negative. Compared to traditional method, a two-bipolar transistor structure is adopted which could reduce the circuit area in chip and improve the layout sym-metry. Furthermore, an OPAMP circuit was designed to improve the PSRR. The reference voltage could be adjusted in a wider adjustment with 16 levels. Implemented with 0. 35 μm CMOS process, the Hspice simulation results showed that the temperature coefficient can be adjusted from-1.76 mV/℃ to +1.84 mV/℃ and the PSRR of the reference voltage rea-ches -110 dB at low frequency.