仪表技术与传感器
儀錶技術與傳感器
의표기술여전감기
INSTRUMENT TECHNIQUE AND SENSOR
2009年
z1期
205-207
,共3页
铟凸点%Au-In键合%倒装焊
銦凸點%Au-In鍵閤%倒裝銲
인철점%Au-In건합%도장한
indium bump%Au-In bonding%flip-chip bonding
介绍了Au-In键合在MEMS芯片封装中的应用.根据现有的工艺设备和实验条件对制备铟凸点阵列进行了工艺设计,对铟凸点制备技术进行了研究,最终在硅圆片上制备了6 μm高的铟凸点阵列.在150～300 ℃下成功地进行了Au-In倒装键合实验.在300 ℃,0.3 MPa压力下键合的剪切强度达到了5 MPa.
介紹瞭Au-In鍵閤在MEMS芯片封裝中的應用.根據現有的工藝設備和實驗條件對製備銦凸點陣列進行瞭工藝設計,對銦凸點製備技術進行瞭研究,最終在硅圓片上製備瞭6 μm高的銦凸點陣列.在150～300 ℃下成功地進行瞭Au-In倒裝鍵閤實驗.在300 ℃,0.3 MPa壓力下鍵閤的剪切彊度達到瞭5 MPa.
개소료Au-In건합재MEMS심편봉장중적응용.근거현유적공예설비화실험조건대제비인철점진렬진행료공예설계,대인철점제비기술진행료연구,최종재규원편상제비료6 μm고적인철점진렬.재150～300 ℃하성공지진행료Au-In도장건합실험.재300 ℃,0.3 MPa압력하건합적전절강도체도료5 MPa.
This paper introduce the application of Au-In bonding for MEMS package. According to the Equipment and the experiment condition,we designed the process of indium bump arrays,and researched the fabrication of indium film and technology of indium bumps. Finally 6μm-high indium bump arrays were fabricated on the wafer successfully. We have conducted Au-In Flip-Cip bonding experiments at the temperature 150～250 ℃. The die shear strength is 10 Mpa with 250 ℃ and 0.25 Mpa bonding stress.
