电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2009年
11期
29-31,35
,共4页
李群%唐新桂%熊惠芳%张伟
李群%唐新桂%熊惠芳%張偉
리군%당신계%웅혜방%장위
(Pb_(1-x)Sr_x)TiO_3薄膜%sol-gel法%石英基片%结构%光学特性
(Pb_(1-x)Sr_x)TiO_3薄膜%sol-gel法%石英基片%結構%光學特性
(Pb_(1-x)Sr_x)TiO_3박막%sol-gel법%석영기편%결구%광학특성
(Pb_(1-x)Sr_x)TiO_3 thin films%sol-gel method%fused quartz substrates%structure%optical properties
采用sol-gel法制备(Pb_(1-x)Sr_x)TiO_3 (x=0.40, 0.50, 0.60, 0.70,简称PST40, PST50, PST60与PST70)前驱体溶液,通过旋涂工艺在石英玻璃基片上沉积PST薄膜.研究了PST薄膜的结构和光学特性.结果显示,经750 ℃退火30 min,所得PST薄膜为晶化良好的钙钛矿立方结构,薄膜平均晶粒尺寸为200～300 nm.750 ℃退火的PST40、PST50、PST60和PST70薄膜样品的直接带隙能分别为3.74,3.79,3.80和3.85 eV.随着Sr含量的增加,带隙能增加.
採用sol-gel法製備(Pb_(1-x)Sr_x)TiO_3 (x=0.40, 0.50, 0.60, 0.70,簡稱PST40, PST50, PST60與PST70)前驅體溶液,通過鏇塗工藝在石英玻璃基片上沉積PST薄膜.研究瞭PST薄膜的結構和光學特性.結果顯示,經750 ℃退火30 min,所得PST薄膜為晶化良好的鈣鈦礦立方結構,薄膜平均晶粒呎吋為200～300 nm.750 ℃退火的PST40、PST50、PST60和PST70薄膜樣品的直接帶隙能分彆為3.74,3.79,3.80和3.85 eV.隨著Sr含量的增加,帶隙能增加.
채용sol-gel법제비(Pb_(1-x)Sr_x)TiO_3 (x=0.40, 0.50, 0.60, 0.70,간칭PST40, PST50, PST60여PST70)전구체용액,통과선도공예재석영파리기편상침적PST박막.연구료PST박막적결구화광학특성.결과현시,경750 ℃퇴화30 min,소득PST박막위정화량호적개태광립방결구,박막평균정립척촌위200～300 nm.750 ℃퇴화적PST40、PST50、PST60화PST70박막양품적직접대극능분별위3.74,3.79,3.80화3.85 eV.수착Sr함량적증가,대극능증가.
Lead strontium titanate (Pb_(1-x)Sr_x)TiO_3 (x=0.40, 0.50, 0.60 and 0.70, abbreviated as PST40, PST50, PST60 and PST70, respectively) thin films were deposited on fused quartz substrates using a sol-gel method with spin-coating processing. The structure and optical properties of PST thin films were studied. The results show that the all samples are perovskite cubic structure when the PST thin films are annealed at 750 ℃ for 30 min. Its average grain size is 200～300 nm. The direct band gap energies are 3.74, 3.79, 3.80, and 3.85 eV, respectively for PST40, PST50,PST60 and PST70 thin films annealed at 750 ℃. The band energies are increased with increasing content of strontium.
