CAJ | 학술논문

利用Virtual Reactor模拟软件研究了大直径SiC晶体生长中坩埚在感应线圈内不同位置对坩埚内整体温度场、生长腔以及料源内温度场的影响。分析比较了生长腔内径向温度梯度以及轴向温度梯度的变化规律以及坩埚内部整体温度场的分布规律。以此为依据,优化了坩埚设计,获得了理想的适合大直径SiC单晶生长的温场,并成功生长出高质量的7.62cm SiC单晶。
이용Virtual Reactor모의연건연구료대직경SiC정체생장중감과재감응선권내불동위치대감과내정체온도장、생장강이급료원내온도장적영향。분석비교료생장강내경향온도제도이급축향온도제도적변화규률이급감과내부정체온도장적분포규률。이차위의거,우화료감과설계,획득료이상적괄합대직경SiC단정생장적온장,병성공생장출고질량적7.62cm SiC단정。
the effect of the crucible position in the inductive coil on thermal distribution of growth cell and SiC powder using Virtual Reactor simulation software in large diameter SiC single crystal growth was investigated.The changes of the radial and axial temperature difference in growth cell and the laws of thermal distribution in the crucible were studied respectively.In terms of the simulation results,the design of the crucible was optimized and the thermal distribution for growing large diameter SiC single crystal was obtained,finally high quality 7.62 cm SiC single crystal have been grown.