半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
1期
24-30
,共7页
焦世龙%叶玉堂%陈堂胜%冯欧%蒋幼泉%范超%李拂晓
焦世龍%葉玉堂%陳堂勝%馮歐%蔣幼泉%範超%李拂曉
초세룡%협옥당%진당성%풍구%장유천%범초%리불효
GaAsPHEMT%电流模式%敲放大器%噪声系数%眼图
GaAsPHEMT%電流模式%敲放大器%譟聲繫數%眼圖
GaAsPHEMT%전류모식%고방대기%조성계수%안도
GaAs PHEMT%current mode%preamplifier%noise figure%eye diagram
采用0.5μm GaAs PHEMT工艺研制了一种单电源共栅电流模跨阻抗前置放大器(TIA).测量得到放大器-3dB带宽为7.5GHz,跨阻增益为45dBΩ;输入输出电压驻波比(VSWR)均小于2;等效输入噪声电流谱密度在14.3~22pA/ Hz之间,平均值为17.2pA/ Hz.在输入10Gb/s非归零(NRZ)伪随机二进制序列(PRBS)信号下,放大器输出眼图清晰,具有14ps的定时抖动和138mV的峰峰电压.
採用0.5μm GaAs PHEMT工藝研製瞭一種單電源共柵電流模跨阻抗前置放大器(TIA).測量得到放大器-3dB帶寬為7.5GHz,跨阻增益為45dBΩ;輸入輸齣電壓駐波比(VSWR)均小于2;等效輸入譟聲電流譜密度在14.3~22pA/ Hz之間,平均值為17.2pA/ Hz.在輸入10Gb/s非歸零(NRZ)偽隨機二進製序列(PRBS)信號下,放大器輸齣眼圖清晰,具有14ps的定時抖動和138mV的峰峰電壓.
채용0.5μm GaAs PHEMT공예연제료일충단전원공책전류모과조항전치방대기(TIA).측량득도방대기-3dB대관위7.5GHz,과조증익위45dBΩ;수입수출전압주파비(VSWR)균소우2;등효수입조성전류보밀도재14.3~22pA/ Hz지간,평균치위17.2pA/ Hz.재수입10Gb/s비귀령(NRZ)위수궤이진제서렬(PRBS)신호하,방대기수출안도청석,구유14ps적정시두동화138mV적봉봉전압.
A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5μm GaAs PHEMT process.The amplifier has a measured -3dB bandwidth of 7.5GHz and a transimpedance gain of 45dBΩ.Both the input and output voltage standing wave ratios (VSWR) are less than 2 within the bandwidth.The equivalent input noise current spectral density varies from 14.3 to 22pA/ Hz,with an average value of 17.2pA/ Hz.Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence (PRBS) is clear and satisfactory.