半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年
4期
674-678
,共5页
李宏建%欧阳俊%代国章%戴小玉%潘艳芝%谢强
李宏建%歐暘俊%代國章%戴小玉%潘豔芝%謝彊
리굉건%구양준%대국장%대소옥%반염지%사강
电致磷光%能量转移几率%三重态
電緻燐光%能量轉移幾率%三重態
전치린광%능량전이궤솔%삼중태
electrophosphorescence%energy transfer probability%triplet
提出了有机掺杂电致磷光器件中主体(TPD)与客体(Ir(ppy)3)间的能量转移几率表达式,并对能量转移过程进行了讨论.结果表明:(1)三态激子能量转移率(KHG,KGH)随主客体分子间距离R指数增加,KHG随客体分子间距离RGG增加有一个快的减少,且KHG/KGH随R或RGG减少而增加;(2)当R为0.8~1.2nm时,能量转移几率接近线性降低,而当R<1.1nm时,RGG的变化能够被忽略,对于1.1nm<R<1.2nm的情况,RGG(<1.6nm)对η起着越来越重要的作用;(3)当Forster能量转移率增加或Gibb's能减小时,η将会增加.
提齣瞭有機摻雜電緻燐光器件中主體(TPD)與客體(Ir(ppy)3)間的能量轉移幾率錶達式,併對能量轉移過程進行瞭討論.結果錶明:(1)三態激子能量轉移率(KHG,KGH)隨主客體分子間距離R指數增加,KHG隨客體分子間距離RGG增加有一箇快的減少,且KHG/KGH隨R或RGG減少而增加;(2)噹R為0.8~1.2nm時,能量轉移幾率接近線性降低,而噹R<1.1nm時,RGG的變化能夠被忽略,對于1.1nm<R<1.2nm的情況,RGG(<1.6nm)對η起著越來越重要的作用;(3)噹Forster能量轉移率增加或Gibb's能減小時,η將會增加.
제출료유궤참잡전치린광기건중주체(TPD)여객체(Ir(ppy)3)간적능량전이궤솔표체식,병대능량전이과정진행료토론.결과표명:(1)삼태격자능량전이솔(KHG,KGH)수주객체분자간거리R지수증가,KHG수객체분자간거리RGG증가유일개쾌적감소,차KHG/KGH수R혹RGG감소이증가;(2)당R위0.8~1.2nm시,능량전이궤솔접근선성강저,이당R<1.1nm시,RGG적변화능구피홀략,대우1.1nm<R<1.2nm적정황,RGG(<1.6nm)대η기착월래월중요적작용;(3)당Forster능량전이솔증가혹Gibb's능감소시,η장회증가.
An expression for energy transfer probability (η) between host (TPD) and guest (Ir(ppy)3) phosphorescent systems is proposed,and the energy transfer process in doped organic electrophosphorescent (EP) devices is discussed. The results show that (1) The rate of the triplet energy transfer (KHG and KGH) exponentially increases with the host-guest molecular distance (R), and KHG decreases quickly as the intermolecular distance of the guest (RGG) increases. In addition,the KHG/KGH ratio of the dopant system increases when R or RGG is reduced;(2) The energy transfer probability approximately linearly decreases as R increases from 0.8 to 1.2nm,and the variation of R GG can be neglected when R <1. 1nm. For 1. 1 nm< R <1. 2nm, R GG (<1. 6nm) plays an increasingly important role when ηdrops with the latter; (3) ηincreases when the Forster energy transfer rate increases or Gibb's energy declines.