CAJ | 학술논문

为了研究铈,钇离子注入对纯锆耐蚀性的影响,纯锆样品用MEVVA源以40 kV注入1×1016 ions/cm2至1×1017 ions/cm2剂量的钇和铈,注入最高温度约为150℃.用X光电子谱仪(XPS)分析注入表层元素的价态;在1 mol/L硫酸溶液中3次极化测量来研究注入样品的耐蚀性.对于钇离子注入,当注入剂量大于5×1016 ions/cm2时,注入样品的耐蚀性显著提高.用掠角X射线衍射(GAXRD)研究氧化膜中由于铈离子注入发生的相转移.三次极化测量表明注铈样品与空白样品相比,耐蚀性下降许多.最后分别对注入钇和铈样品的腐蚀行为机理进行了探讨.
위료연구시,을리자주입대순고내식성적영향,순고양품용MEVVA원이40 kV주입1×1016 ions/cm2지1×1017 ions/cm2제량적을화시,주입최고온도약위150℃.용X광전자보의(XPS)분석주입표층원소적개태;재1 mol/L류산용액중3차겁화측량래연구주입양품적내식성.대우을리자주입,당주입제량대우5×1016 ions/cm2시,주입양품적내식성현저제고.용략각X사선연사(GAXRD)연구양화막중유우시리자주입발생적상전이.삼차겁화측량표명주시양품여공백양품상비,내식성하강허다.최후분별대주입을화시양품적부식행위궤리진행료탐토.
In order to study the influences of ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted by yttrium and cerium ions with a fluence range from 1×1016 to 1×1017 ions/cm2 at about 150℃, using MEVVA source at an extracted voltage of 40 kV. The valence of the surface layer was analyzed by X-ray photoelectron spectroscopy (XPS), three-sweep potentiodynamic polarization measurement was used to investigate the aqueous corrosion resistance of zirconium in a 1 mol/L H2SO4 solution. It is found that a significant improvement can be achieved in the aqueous corrosion behavior of zirconium compared with that of the as-received zirconium, when implanted yttrium ions fluence is more than 5×1016 ions/cm2. Glancing angle X-ray diffraction (GAXRD) was used to examine the phase transformation due to the cerium ion implantation in the oxide films. It was found that a remarkable decline in the aqueous corrosion behavior of zirconium implanted with cerium ions compared with that of the as-received zirconium. Finally, the mechanisms of the corrosion resistance behavior of the yttrium and cerium implanted zirconium are discussed respectively.