CAJ | 학술논문

提出了一种综合的SiC反型层库仑散射解析模型，并在模型中考虑了库仑电荷中心的相关性．对6H-SiC反型层电子迁移率进行了单电子MonteCarlo模拟，模拟结果和实验值相符．模拟结果表明，当有效横向电场变小时库仑散射的作用将增强，库仑电荷密度和分布也对反型层迁移率有着重要影响．
제출료일충종합적SiC반형층고륜산사해석모형，병재모형중고필료고륜전하중심적상관성．대6H-SiC반형층전자천이솔진행료단전자MonteCarlo모의，모의결과화실험치상부．모의결과표명，당유효횡향전장변소시고륜산사적작용장증강，고륜전하밀도화분포야대반형층천이솔유착중요영향．
A comprehensive analytical model for coulomb scattering in 6H-SiCinversion layers is presented considering all the coulomb effects of the charged-centers near the SiC/SiO2 interface. This model takes into account the effects of the charged-centers correlation. The electron mobility in 6H-SiC inversion layers has been studied by the single-particle Monte Carlo technique. The simulation results agree with the experimental data very well. The study shows that coulomb scattering becomes more important at low transverse-electric field and both the density and the distribution of charged-cneters play an important role in electron transport in SiC inversion layers.