CAJ | 학술논문

利用热丝CVD方法研究了横向偏压对金刚石薄膜成核和生长的影响．实验表明，随着偏流的增加，金刚石在光滑硅衬底上的成核密度得到显著提高，最高可达1．1×108cm-2，但是横向偏压不利于金刚石薄膜的生长．原位光发射谱研究发现，横向偏流的增加提高了原子氢和CH基团的浓度，导致衬底表面非晶碳层的形成，这可能是造成横向偏压促进金刚石成核却不利于金刚石薄膜生长的主要原因．
이용열사CVD방법연구료횡향편압대금강석박막성핵화생장적영향．실험표명，수착편류적증가，금강석재광활규츤저상적성핵밀도득도현저제고，최고가체1．1×108cm-2，단시횡향편압불리우금강석박막적생장．원위광발사보연구발현，횡향편류적증가제고료원자경화CH기단적농도，도치츤저표면비정탄층적형성，저가능시조성횡향편압촉진금강석성핵각불리우금강석박막생장적주요원인．
The nucleation and growth of diamond film under transverse bias was investigated in a hot-filament chemical vapor deposition system. It was shown that the nucleation density of diamond is enhanced with the increasing of transverse bias current. A nucleation density of 1.1×.10 8cm-2 can be obtained, but transverse bias is harmful to the growth of diamond film.In situ optical emission spectroscopy technology was used to study the diamond film deposition process. The results showed that the improvement of the nucleation density and the harm of the growth may be caused by the abundance of atomic hydrogen and CH radical which is favorable to the formation of thin amorphous carbon layers.