CAJ | 학술논문

考虑了内建电场的影响,用变分法计算了GaN/GaAlN量子阱(QW)的电子子带和激子结合能.结果表明,对于阱宽较大情形,电子和空穴高度局域在QW边沿附近.内建电场造成的电子空穴空间的较大分离使QW激子表现出二类阱特征.重空穴基态结合能对Al浓度变化不敏感.
고필료내건전장적영향,용변분법계산료GaN/GaAlN양자정(QW)적전자자대화격자결합능.결과표명,대우정관교대정형,전자화공혈고도국역재QW변연부근.내건전장조성적전자공혈공간적교대분리사QW격자표현출이류정특정.중공혈기태결합능대Al농도변화불민감.
The properties of excitons in a GaN/GaAlN quantum well(QW) are inverstigated by using a variational method with consideration of the build-in internal electric field(IEF).It is shown that,for the QW with wider well width,the electrons and holes are highly localized near the edges of the well due to the build-in internal electric field.The strong electron-hole separation induced by the field makes the well behave just like a type-Ⅱ-well.The binding energies of the ground-state heavy hole excitons are not sensitive to Al composition.