等离子体科学和技术(英文版)
等離子體科學和技術(英文版)
등리자체과학화기술(영문판)
PLASMA SCIENCE & TECHNOLOGY
2001年
5期
947-952
,共6页
黄峰%康健%叶超%杨慎东%程珊华%宁兆元
黃峰%康健%葉超%楊慎東%程珊華%寧兆元
황봉%강건%협초%양신동%정산화%저조원
Fluorinated amorphous carbon (a-C:F) thin film has been deposited by microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using C6H6 and CHF3as source gases. The result of x-ray photoelectron spectroscopy (XPS) shows that the main bonds in the film as-deposited are C-C, C-F and CF2. The measurement of postive I-V property indicates that the conductance of the film presents Omic characteristic at a lower electric field,and follows Schotty emission at a higher electric field.
