半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2009年
12期
1209-1212
,共4页
凸点下金属层%湿法刻蚀%凸点底切%单片机%电镀凸点%刻蚀速率%刻蚀均匀度
凸點下金屬層%濕法刻蝕%凸點底切%單片機%電鍍凸點%刻蝕速率%刻蝕均勻度
철점하금속층%습법각식%철점저절%단편궤%전도철점%각식속솔%각식균균도
UBM%wet etching%undercut%single wafer tool%electroplating bump%etching rate%etching uniformity
介绍了电镀凸点封装工艺流程和其中有关金属层湿化学刻蚀的问题.通过槽式批量和单片机刻蚀相应的UBM(凸点下金属层)的均匀度、刻蚀速率和凸点底切的对比,结果显示单片湿法刻蚀机刻蚀均匀度小于5%且片与片之间刻蚀速率差异小于2%,以及凸点底切小于2μm.槽式刻蚀均匀度较差,一般会大于20%,同时同一批次片与片之间刻蚀速率差异也较大,实验显示超过10%,且刻蚀后凸点底切较深.因此采用单片机进行UBM金属刻蚀可以较好的控制刻蚀过程和提高产品的良率.
介紹瞭電鍍凸點封裝工藝流程和其中有關金屬層濕化學刻蝕的問題.通過槽式批量和單片機刻蝕相應的UBM(凸點下金屬層)的均勻度、刻蝕速率和凸點底切的對比,結果顯示單片濕法刻蝕機刻蝕均勻度小于5%且片與片之間刻蝕速率差異小于2%,以及凸點底切小于2μm.槽式刻蝕均勻度較差,一般會大于20%,同時同一批次片與片之間刻蝕速率差異也較大,實驗顯示超過10%,且刻蝕後凸點底切較深.因此採用單片機進行UBM金屬刻蝕可以較好的控製刻蝕過程和提高產品的良率.
개소료전도철점봉장공예류정화기중유관금속층습화학각식적문제.통과조식비량화단편궤각식상응적UBM(철점하금속층)적균균도、각식속솔화철점저절적대비,결과현시단편습법각식궤각식균균도소우5%차편여편지간각식속솔차이소우2%,이급철점저절소우2μm.조식각식균균도교차,일반회대우20%,동시동일비차편여편지간각식속솔차이야교대,실험현시초과10%,차각식후철점저절교심.인차채용단편궤진행UBM금속각식가이교호적공제각식과정화제고산품적량솔.
The process flow of electroplating bump and the issues of UBM wet etching were discussed. The etching uniformity of UBM layer and the bump undercut were compared by batch tool and single wafer tool. By single wafer etching tool, the etching uniformity is less than 5 % and the difference of etching rate is less than 2% among wafers, and the bump undercut is also less than 2 μm. However, by batch tool etching, the uniformity is more than 20% and the difference of etching rate is grater than 10% in the same lot of wafers, and the bump undercut is deeper than 7 μm. Thus, it will improve the final yield rate of etching UBM layers by single wafer tool.
