CAJ | 학술논문

以物理气相沉积方法将TCNQ和Ag制备的金属有机络合物薄膜，在一定的工艺条件下可做到构成薄膜的晶粒直径为40 nm左右，粗糙度也为纳米量级。同时在大气及室温条件下，在STM电场的作用下薄膜可从高阻态转换为低阻态，作用点的直径约为70 nm。
이물리기상침적방법장TCNQ화Ag제비적금속유궤락합물박막，재일정적공예조건하가주도구성박막적정립직경위40 nm좌우，조조도야위납미량급。동시재대기급실온조건하，재STM전장적작용하박막가종고조태전환위저조태，작용점적직경약위70 nm。
Organometallic complex Ag-TCNQ thin film was prepared by physical vapor deposition and low temperature annea-ling.The film was studied with an air scanning tunneling microscopy.The grain sizes of the film was estimated to be less than 40 nm with a roughness of a few nanometers.The electric field of the SPM tip can significantly change the impedance of the film ,from a high impedance state to a low impedance state.The low impedance area involved was evaluated to be 70 nm in diameter.