化学物理学报
化學物理學報
화학물이학보
CHINESE JOURNAL OF CHEMICAL PHYSICS
2006年
6期
549-554
,共6页
薄膜结构%XRD%Raman谱%锐钛矿%掺杂%光电流密度
薄膜結構%XRD%Raman譜%銳鈦礦%摻雜%光電流密度
박막결구%XRD%Raman보%예태광%참잡%광전류밀도
Crystal structure%XRD pattern%Raman spectra%Anatase%Dopant%Anode current density
用溶胶-凝胶法将纳米TiO2:Sb薄膜沉积在玻璃基板上.通过XRD、Raman光谱研究了Sb掺杂量对薄膜的晶体结构和晶相转变的影响.结果表明:纯TiO2溥膜中,TiO2不仅以无定型念存在,而且还以板钛矿和锐钛矿的形式存在.掺入适量的Sb后,由于Sb替代了TiO2的部分Ti形成Sb-O-Ti结构,改变了TiO2的晶格结构,改善了薄膜的结晶效率,使锐钛矿结构的TiO2:Sb含量明显提高.掺杂0.2%Sb时,薄膜的结晶效率最高.254 nm光源照射时,掺杂0.2%Sb的电极的阳极光电流密度可达42.49 μA/cm2,是用同种方法制备的纯TiO2薄膜电极的近11倍;对亚甲基蓝具有最高分解性能,其一级反应速率常数为0.171 h/cm2,是未掺杂的纯TiO2薄膜的近2倍.
用溶膠-凝膠法將納米TiO2:Sb薄膜沉積在玻璃基闆上.通過XRD、Raman光譜研究瞭Sb摻雜量對薄膜的晶體結構和晶相轉變的影響.結果錶明:純TiO2溥膜中,TiO2不僅以無定型唸存在,而且還以闆鈦礦和銳鈦礦的形式存在.摻入適量的Sb後,由于Sb替代瞭TiO2的部分Ti形成Sb-O-Ti結構,改變瞭TiO2的晶格結構,改善瞭薄膜的結晶效率,使銳鈦礦結構的TiO2:Sb含量明顯提高.摻雜0.2%Sb時,薄膜的結晶效率最高.254 nm光源照射時,摻雜0.2%Sb的電極的暘極光電流密度可達42.49 μA/cm2,是用同種方法製備的純TiO2薄膜電極的近11倍;對亞甲基藍具有最高分解性能,其一級反應速率常數為0.171 h/cm2,是未摻雜的純TiO2薄膜的近2倍.
용용효-응효법장납미TiO2:Sb박막침적재파리기판상.통과XRD、Raman광보연구료Sb참잡량대박막적정체결구화정상전변적영향.결과표명:순TiO2부막중,TiO2불부이무정형념존재,이차환이판태광화예태광적형식존재.참입괄량적Sb후,유우Sb체대료TiO2적부분Ti형성Sb-O-Ti결구,개변료TiO2적정격결구,개선료박막적결정효솔,사예태광결구적TiO2:Sb함량명현제고.참잡0.2%Sb시,박막적결정효솔최고.254 nm광원조사시,참잡0.2%Sb적전겁적양겁광전류밀도가체42.49 μA/cm2,시용동충방법제비적순TiO2박막전겁적근11배;대아갑기람구유최고분해성능,기일급반응속솔상수위0.171 h/cm2,시미참잡적순TiO2박막적근2배.
Nanoscale Sb doped titanium dioxide thin films photocatalyst (Ti1-xSbO2) were obtained from dip-coating sol-gel method. The influence of dopant Sb density on the crystal structure and the phase transformation of the thin films were characterized by X-ray diffraction (XRD) and Raman spectra. The results of XRD showed that as-prepared films were not only in anatase state but also in brookite. The crystalline size was estimated to be around 13.3-20 nm. Raman spectra indicated there coexisted other phases and a transformation from brookite to anatase in the samples doped with 0.2% Sb. After doping a proper amount of Sb, the crystallization rate and the content of the anatase Ti1-xSbO2 in the thin films was clearly enhanced because Sb replaced part of the Ti of TiO2 in the thin films. The anode current density (photocurrent density) and the first order reaction speed constant (k) of thin films doped with 0.2% Sb reached 42.49 μA/cm2 and 0.171 h/cm2 under 254 nm UV illumination, respectively, which is about 11 times and 2 times that of the non-doped TiO2 anode prepared by the same method respectively.