CAJ | 학술논문

通过将二级光栅直接刻在脊形波导AlGaInAs/AlGaAs DFB激光器的无铝光波导层上,实现了波长约为820nm,单面功率为30mW的单纵模激光器.由于采用无铝光栅,保证了二次外延质量,从而得到较好的器件性能.激光器的阈值电流为57mA,斜率效率约为0.32mW/mA.
통과장이급광책직접각재척형파도AlGaInAs/AlGaAs DFB격광기적무려광파도층상,실현료파장약위820nm,단면공솔위30mW적단종모격광기.유우채용무려광책,보증료이차외연질량,종이득도교호적기건성능.격광기적역치전류위57mA,사솔효솔약위0.32mW/mA.
By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.