CAJ | 학술논문

以ZnS、Mg粉末为原料,应用双源真空蒸镀法,在石英玻璃衬底上成功地制备了不同Mg含量x的三元固溶体半导体Zn1-xMgxS薄膜.根据薄膜的X射线能量色散谱、X射线衍射谱和紫外-可见吸收光谱,由Vegard定律得到在实验范围内不同Mg含量x的薄膜晶格常数a与x的关系可表达为a(x)＝0.53965-0.01415x(nm);薄膜的光学带隙Eg与x的关系可表达为Eg(x)=0.853x2+0.086x+3.662(eV).
이ZnS、Mg분말위원료,응용쌍원진공증도법,재석영파리츤저상성공지제비료불동Mg함량x적삼원고용체반도체Zn1-xMgxS박막.근거박막적X사선능량색산보、X사선연사보화자외-가견흡수광보,유Vegard정률득도재실험범위내불동Mg함량x적박막정격상수a여x적관계가표체위a(x)＝0.53965-0.01415x(nm);박막적광학대극Eg여x적관계가표체위Eg(x)=0.853x2+0.086x+3.662(eV).
The solid-solution semiconductor Zn1-xMgxS thin films were grown by vacuum co-evaporation of ZnS and Mg powders on quartz glass substrate.The influence of the film growth conditions and Mg content on the microstructures of the Zn1-xMgxS films was studied.Its electronic structures were characterized with X-ray diffraction (XRD),X-ray energy dispersive spectroscopy (EDS) and ultraviolet visible (UV-Vis) absorption spectroscopy.The results show that the stoichiometry of Mg,x,in the Zn1-xMgxS films significantly affects the lattice constant,a,and the optical energy gap,Eg,of the Zn1-xMgxS films.By using Vegard law,two equations were experimentally derived:a(x)=0.53965-0.01415x(nm) and Eg(x)=0.853x2+0.086x+3.662(eV).