CAJ | 학술논문

对陶瓷基板上的集成微电感模型进行了分析.由于陶瓷基板的介电常数比Si基板低,电阻率极高,因此衬底损耗大大减小,从而有效提高了电感的Q值.同时,为了更好进行对比,研究中采用相同工艺在陶瓷基板和Si基板上同批制作了集成电感,两者的结构参数完全一致.测试结果表明,两者的电感值L基本相同,然而陶瓷基板上集成微电感Q值的峰值要比Si基板集成微电感高7左右,Si基板上Q值峰值在5 GHz以下,而陶瓷基板集成微电感的Q值峰值在10 GHz左右.
대도자기판상적집성미전감모형진행료분석.유우도자기판적개전상수비Si기판저,전조솔겁고,인차츤저손모대대감소,종이유효제고료전감적Q치.동시,위료경호진행대비,연구중채용상동공예재도자기판화Si기판상동비제작료집성전감,량자적결구삼수완전일치.측시결과표명,량자적전감치L기본상동,연이도자기판상집성미전감Q치적봉치요비Si기판집성미전감고7좌우,Si기판상Q치봉치재5 GHz이하,이도자기판집성미전감적Q치봉치재10 GHz좌우.
The model of integrated inductor based on ceramic substrate was analyzed. The Q values of inductors increase dramatically because of the lower dielectric constant and higher bulk conductivity of ceramic substrate, which leads to smaller substrate loss than Si substrate. At the same time, integrated inductors were fabricated on both ceramic and Si substrate for comparison. Testing results show that the L values of inductors on both substrates are more or less the same, but the peak Q value of inductors on ceramic is about 7 higher than those on Si substrate. And the maximum value of Q on ceramic substrate is at about 10 GHz, while that on Si substrate is at about S GHz.