0.35μm SiGeBiCMOS10位1GSPS单片直接数字频率合成器
0.35μm SiGeBiCMOS10위1GSPS단편직접수자빈솔합성기
10-Bit 1 GSPS Monolithic DDFS Based on 0.35 μm SiGe BiCMOS Process
  • 万方数据
    微电子学 미전자학
    MICROELECTRONICS
    2010年 2期 169-172 ,共4页

    傅东兵%刘军%张瑞涛%严纲%俞宙%李儒章

    부동병%류군%장서도%엄강%유주%리유장

    直接数字频率合成器%CORDIC%DAC%SiGe%BiCMOS 直接數字頻率閤成器%CORDIC%DAC%SiGe%BiCMOS
    직접수자빈솔합성기%CORDIC%DAC%SiGe%BiCMOS
    Direct digital frequency synthesizer (DDS)%CORDIC%DAC%SiGe%BiCMOS
    设计了一个基于SiGe BiCMOS工艺的高速数字频率合成器.该电路在一块芯片上集成了DDS核、分段式电流舵DAC、并/串接口、时钟控制逻辑等模块.芯片采用标准0.35 μm SiGe BiCMOS工艺流片.测试结果表明,DDS能够生成高速、高质量的正弦/余弦捷变波形.
    설계료일개기우SiGe BiCMOS공예적고속수자빈솔합성기.해전로재일괴심편상집성료DDS핵、분단식전류타DAC、병/천접구、시종공제라집등모괴.심편채용표준0.35 μm SiGe BiCMOS공예류편.측시결과표명,DDS능구생성고속、고질량적정현/여현첩변파형.
    A high-speed SiGe BiCMOS direct digital frequency synthesizer was designed, into which DDS core, segmented current-steering D/A converter, parallel/serial interface and clock circuits were integrated. The circuit was fabricated in 0.35 μm SiGe BiCMOS standard process. Test results showed that the DDS could generate high-speed and high-quality sine/cosine waveforms.
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